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激光分子束外延方法生长的ZnO薄膜的发光特性 被引量:12
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作者 谢伦军 陈光德 +4 位作者 竹有章 张景文 杨晓东 徐庆安 侯洵 《发光学报》 EI CAS CSCD 北大核心 2006年第2期215-220,共6页
研究了不同温度和不同光激发强度下激光分子束外延方法生长的ZnO薄膜样品的发光性能,发现YAG脉冲激光激发,强度超过一定值时会在长波方向上出现一个新的发光峰,此峰可能起源于电子-空穴的复合。室温下氙灯激发的光谱中可以看到峰值位于3... 研究了不同温度和不同光激发强度下激光分子束外延方法生长的ZnO薄膜样品的发光性能,发现YAG脉冲激光激发,强度超过一定值时会在长波方向上出现一个新的发光峰,此峰可能起源于电子-空穴的复合。室温下氙灯激发的光谱中可以看到峰值位于381 nm的近带边紫外发射峰和位于450 nm的强的蓝绿带发射,根据光致发光激发光谱的特征给出了一个简单的蓝光发射模型。对比YAG脉冲激光激发和氙灯激发得到的实验光谱,我们认为不同的光谱特征和样品发光的激发机制有关,紫外峰发射需激发强度超过一定值才能观察到,而蓝带发射则在一定的激发强度下迅速饱和。 展开更多
关键词 ZNO薄膜 光致发光 电子-空穴等离子体 蓝带发射
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GaN基绿光LED材料蓝带发光对器件特性的影响 被引量:2
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作者 邵嘉平 郭文平 +3 位作者 胡卉 郝智彪 孙长征 罗毅 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第11期1496-1499,共4页
分析比较了在不同外延生长条件下 Ga N基高 In组分绿光 L ED材料室温和低温 10 K下光致发光谱中蓝带发光峰 ,研究了外延结构中 p型层蓝带峰发光特性对材料晶体质量和器件电光转换效率的影响 .结果表明 :通过优化 p型层的外延生长条件 ,... 分析比较了在不同外延生长条件下 Ga N基高 In组分绿光 L ED材料室温和低温 10 K下光致发光谱中蓝带发光峰 ,研究了外延结构中 p型层蓝带峰发光特性对材料晶体质量和器件电光转换效率的影响 .结果表明 :通过优化 p型层的外延生长条件 ,可有效降低和消除其蓝带发光峰较之多量子阱主峰的相对强度 ,有利于提高 L ED器件特别是高 In组分绿光 L ED器件在同等注入电流条件下的发光功率 . 展开更多
关键词 GAN LED材料 蓝带发光
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Seeking new,ultra-narrow-band blue emitting phosphors with high color purity for wide color gamut displays
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作者 Zuobin Tang Feng Du +3 位作者 Zhihua Leng Huidong Xie Yanyan Li Lei Zhao 《Journal of Rare Earths》 SCIE EI CAS CSCD 2023年第12期1876-1882,I0002,共8页
Ultra-narrow-band phosphors have gained widespread applications in lighting and displays to enhance brightness and improve color saturation.Typical phosphor designs employ UCr_(4)C_(4)-type compounds and designing new... Ultra-narrow-band phosphors have gained widespread applications in lighting and displays to enhance brightness and improve color saturation.Typical phosphor designs employ UCr_(4)C_(4)-type compounds and designing new narrow-band phosphors with high color purity is a major challenge.Here,we explored a Eu^(2+)-doped Ba_(5)GeO_(4)Br_(6)phosphor,showing a narrow-band blue emission(λ_(em)=436 nm) excitation at the near-ultraviolet light with a full width at half maximum of 30.7 nm and high color purity of 96.6%.In addition,attractive cathodoluminescence characteristics were systematically analyzed by varying filament current(30-70 mA) and accelerating voltage(3-7 eV).Robust anti-degradation behavior and color point stability under continuous electron beam bombardment were confirmed.Given its excellent performance in photoluminescence and cathodoluminescence,application in wide color gamut displays appears promising.Using commercial phosphors β-SiAlON:Eu^(2+)and K_(2)SiF6:Mn^(4+)as green and red light co nverte rs respectively,and the title phosphor as the blue light converters,the fabricated w-LED exhibits a wide color gamut of 82% NTSC. 展开更多
关键词 blue-emitting phosphor BasGeO_(4)Br_(6):Eu^(2+) Narrow band Phosphor-converted light-emitting diodes Field emission displays Rare earths
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Observation of Blue-Light Emission Band from Eu-Doped Ta<sub>2</sub>O<sub>5 </sub>Thin Films Prepared Using Co-Sputtering
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作者 Kenta Miura Yuki Arai Osamu Hanaizumi 《Materials Sciences and Applications》 2015年第7期676-680,共5页
In this paper, we report on the first observation of blue-light emission bands from europium-doped tantalum pentoxide (Ta2O5:Eu) thin films prepared using a simple co-sputtering method. We prepared four specimens from... In this paper, we report on the first observation of blue-light emission bands from europium-doped tantalum pentoxide (Ta2O5:Eu) thin films prepared using a simple co-sputtering method. We prepared four specimens from one as-deposited sample, and we subsequently annealed them at 700&degC, 800&degC, 900&degC, or 1000&degC for 20 min. Four remarkable photoluminescence (PL) peaks at wavelengths of 600, 620, 650, and 700 nm due to the 5D0→7F1, 5D0→7F2, 5D0→7F3, and 5D0→7F4 transitions of Eu3+ were observed from all the specimens, and blue PL peaks around a wavelength of 450 nm were also observed from the specimens annealed at 800&degC, 900&degC, and 1000&degC. The blue PL peaks seem to be originated from the 4f65d1→4f7 transition of Eu2+. Both Eu3+ and Eu2+ ions seem to exist in our Ta2O5:Eu co-sputtered thin films annealed at temperatures from 800&degC to 1000&degC. Such Ta2O5:Eu co-sputtered thin films seem to be used as multi-functional coating films having both anti-reflection and down-conversion effects for realizing high-efficiency silicon solar cells. 展开更多
关键词 Ta2O5 Eu Co-Sputtering blue-LIGHT emission band
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电沉积氧化锌纳米柱的带隙和近带边发射蓝移
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作者 汤洋 《材料研究学报》 EI CAS CSCD 北大核心 2020年第11期875-880,共6页
用电化学沉积方法制备了ZnO纳米柱阵列。在Zn(NO3)2基础电解液中加入新电解质并引入NH4NO3和Ga(NO3)3,实现了对ZnO纳米柱阵列的带隙、近带边发射、斯托克斯位移、直径、密度等物理性质的设计和裁剪。可在63~77 nm操控纳米柱的直径。增... 用电化学沉积方法制备了ZnO纳米柱阵列。在Zn(NO3)2基础电解液中加入新电解质并引入NH4NO3和Ga(NO3)3,实现了对ZnO纳米柱阵列的带隙、近带边发射、斯托克斯位移、直径、密度等物理性质的设计和裁剪。可在63~77 nm操控纳米柱的直径。增加电解液中的Ga(NO3)3浓度,阵列的密度可降低到7.0×109/cm2。新加入电解液中的盐类使ZnO纳米柱的带隙蓝移~50 meV并使光致发光图谱中的近带边发射蓝移53~73 meV以及斯托克斯位移蓝移23 meV,表明可对其非辐射复合进行抑制设计和裁剪。 展开更多
关键词 无机非金属材料 氧化锌 电沉积 硝酸镓 带隙蓝移 近带边发射
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