With the advancements in gene sequencing technologies,including genome-wide association studies,polygenetic risk scores,and high-throughput sequencing,there has been a tremendous advantage in mapping a detailed bluepr...With the advancements in gene sequencing technologies,including genome-wide association studies,polygenetic risk scores,and high-throughput sequencing,there has been a tremendous advantage in mapping a detailed blueprint for the genetic model of bipolar disorder(BD).To date,intriguing genetic clues have been identified to explain the development of BD,as well as the genetic association that might be applied for the development of susceptibility prediction and pharmacogenetic intervention.Risk genes of BD,such as CACNA1C,ANK3,TRANK1,and CLOCK,have been found to be involved in various pathophysiological processes correlated with BD.Although the specific roles of these genes have yet to be determined,genetic research on BD will help improve the prevention,therapeutics,and prognosis in clinical practice.The latest preclinical and clinical studies,and reviews of the genetics of BD,are analyzed in this review,aiming to summarize the progress in this intriguing field and to provide perspectives for individualized,precise,and effective clinical practice.展开更多
The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive positi...The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.展开更多
针对Web of Science核心合集数据库中2000年1月至2020年10月的燃料电池双极板材料与制备工艺文献进行计量学分析,并利用CiteSpace可视化分析工具绘制了核心研究国家、作者、研究机构及关键词演进的结构图谱。结果表明:双极板研究热点主...针对Web of Science核心合集数据库中2000年1月至2020年10月的燃料电池双极板材料与制备工艺文献进行计量学分析,并利用CiteSpace可视化分析工具绘制了核心研究国家、作者、研究机构及关键词演进的结构图谱。结果表明:双极板研究热点主要是金属材料双极板的耐腐蚀性与高聚物基复合材料双极板的导电性。金属极板耐蚀性问题存在离子污染、基体材料与涂层技术等研究内容,离子污染研究揭示了极板腐蚀的负面影响,基体材料与涂层技术研究则是去通过调整材料成分或制备工艺上提升性能。高聚物复合材料导电性问题的研究内容是高聚物基体、导电填料以及复合材料导电率等预测模型,导电率预测模型是研究复合材料组成的重要理论依据。展开更多
比较了传统带运算放大器的带隙基准电压源电路与采用曲率补偿技术的改进电路,设计了一种适合汽车电子使用的带隙基准电压源,该设计电路基于上海贝岭2μm 40 V bipolar工艺,采用一阶曲率补偿技术,充分考虑了汽车空间有限、温差大、噪声...比较了传统带运算放大器的带隙基准电压源电路与采用曲率补偿技术的改进电路,设计了一种适合汽车电子使用的带隙基准电压源,该设计电路基于上海贝岭2μm 40 V bipolar工艺,采用一阶曲率补偿技术,充分考虑了汽车空间有限、温差大、噪声多的环境特点,没有使用运放,避免其复杂的结构以及所引起的失调,因此降低了电路成本并改善性能,设计中还引入了启动电路,大大降低了附加功耗。用Cadence Spectre对电路仿真,结果表明,电路温度特性好,抗干扰能力强,有较高的电源抑制比(PSRR),达到预期指标。展开更多
基金supported by the Zhejiang Provincial Key Research and Development Program(2021C03107)the Leading Talent of Scientific and Technological Innovation“Ten Thousand Talents Program”of Zhejiang Province(2021R52016)+1 种基金the Innovation Team for Precision Diagnosis and Treatment of Major Brain Diseases(2020R01001)the Research Project of Jinan Microecological Biomedicine Shandong Laboratory(JNL-2023001B).
文摘With the advancements in gene sequencing technologies,including genome-wide association studies,polygenetic risk scores,and high-throughput sequencing,there has been a tremendous advantage in mapping a detailed blueprint for the genetic model of bipolar disorder(BD).To date,intriguing genetic clues have been identified to explain the development of BD,as well as the genetic association that might be applied for the development of susceptibility prediction and pharmacogenetic intervention.Risk genes of BD,such as CACNA1C,ANK3,TRANK1,and CLOCK,have been found to be involved in various pathophysiological processes correlated with BD.Although the specific roles of these genes have yet to be determined,genetic research on BD will help improve the prevention,therapeutics,and prognosis in clinical practice.The latest preclinical and clinical studies,and reviews of the genetics of BD,are analyzed in this review,aiming to summarize the progress in this intriguing field and to provide perspectives for individualized,precise,and effective clinical practice.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61574171,61704127,11875229,51872251,and 12027813)。
文摘The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.
文摘针对Web of Science核心合集数据库中2000年1月至2020年10月的燃料电池双极板材料与制备工艺文献进行计量学分析,并利用CiteSpace可视化分析工具绘制了核心研究国家、作者、研究机构及关键词演进的结构图谱。结果表明:双极板研究热点主要是金属材料双极板的耐腐蚀性与高聚物基复合材料双极板的导电性。金属极板耐蚀性问题存在离子污染、基体材料与涂层技术等研究内容,离子污染研究揭示了极板腐蚀的负面影响,基体材料与涂层技术研究则是去通过调整材料成分或制备工艺上提升性能。高聚物复合材料导电性问题的研究内容是高聚物基体、导电填料以及复合材料导电率等预测模型,导电率预测模型是研究复合材料组成的重要理论依据。
文摘比较了传统带运算放大器的带隙基准电压源电路与采用曲率补偿技术的改进电路,设计了一种适合汽车电子使用的带隙基准电压源,该设计电路基于上海贝岭2μm 40 V bipolar工艺,采用一阶曲率补偿技术,充分考虑了汽车空间有限、温差大、噪声多的环境特点,没有使用运放,避免其复杂的结构以及所引起的失调,因此降低了电路成本并改善性能,设计中还引入了启动电路,大大降低了附加功耗。用Cadence Spectre对电路仿真,结果表明,电路温度特性好,抗干扰能力强,有较高的电源抑制比(PSRR),达到预期指标。
