摘要
本文报导了２μｍ高性能单层多晶硅双极器件及工艺。为了改善器件性能，对基础工艺的改进和完善作了试验，如减少外延自掺杂及缺陷；改善ＥＣ漏电；降低发射极串联电阻等。并列出了典型的工艺参数及器件参数。用本工艺得到环振门延迟为２５０～５００ｐｓ，有的可达２００ｐｓ。
The 2-μm high performance single polysilicon bipolar device and its technology arereported in the paper.To improve the device performance,experiments were conducted on themodification and perfection of the basic processes,such as minimizing epitaxial auto-doping and de-fects,improving emitter-collector leakage and reducing emitter serial resistance. Typical processand device parameters are given.Using this technology,a gate delay of 250～500ps has been ob-tained for ECL ring oscillators,some even up to 200ps.
出处
《微电子学》
CAS
CSCD
1994年第4期46-48,共3页
Microelectronics
关键词
双极工艺
多晶硅
双极集成电路
Bipolar technology,Polysilicon emitter,Epitaxial auto-doping,High speed device
