The positive gate-bias temperature instability of a radio frequency （RF） sputtered ZnO thin-film transistor （ZnO TFT） is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state cu...The positive gate-bias temperature instability of a radio frequency （RF） sputtered ZnO thin-film transistor （ZnO TFT） is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current- voltage and capacitance-voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold- voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate- dielectric/channel interface.展开更多
The noise of closed loop micro-electromechanical systems(MEMS) capacitive accelerometer is treated as one of the significant performance specifications.Traditional optimization of noise performance often focuses on de...The noise of closed loop micro-electromechanical systems(MEMS) capacitive accelerometer is treated as one of the significant performance specifications.Traditional optimization of noise performance often focuses on designing large capacitive sensitivity accelerometer and applying closed loop structure to shape total noise,but different noise sources in closed loop and their behaviors at low frequencies are seldom carefully studied,especially their behaviors with different electronic parameters.In this work,a thorough noise analysis is established focusing on the four noise sources transfer functions near 0 Hz with simplified electronic parameters in closed loop,and it is found that the total electronic noise equivalent acceleration varies differently at different frequency points,such that the noise spectrum shape at low frequencies can be altered from 1/f noise-like shape to flat spectrum shape.The bias instability changes as a consequence.With appropriate parameters settings,the 670 Hz resonant frequency accelerometer can reach resolution of 2.6 μg/(Hz)1/2 at 2 Hz and 6 μg bias instability,and 1300 Hz accelerometer can achieve 5μg/(Hz)1/2 at 2 Hz and 31 μg bias instability.Both accelerometers have flat spectrum profile from 2 Hz to 15 Hz.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61076113 and 61274085)the Research Grants Council of Hong Kong,China(Grant No.7133/07E)
文摘The positive gate-bias temperature instability of a radio frequency （RF） sputtered ZnO thin-film transistor （ZnO TFT） is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current- voltage and capacitance-voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold- voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate- dielectric/channel interface.
基金Project(61404122)supported by the National Natural Science Foundation of China
文摘The noise of closed loop micro-electromechanical systems(MEMS) capacitive accelerometer is treated as one of the significant performance specifications.Traditional optimization of noise performance often focuses on designing large capacitive sensitivity accelerometer and applying closed loop structure to shape total noise,but different noise sources in closed loop and their behaviors at low frequencies are seldom carefully studied,especially their behaviors with different electronic parameters.In this work,a thorough noise analysis is established focusing on the four noise sources transfer functions near 0 Hz with simplified electronic parameters in closed loop,and it is found that the total electronic noise equivalent acceleration varies differently at different frequency points,such that the noise spectrum shape at low frequencies can be altered from 1/f noise-like shape to flat spectrum shape.The bias instability changes as a consequence.With appropriate parameters settings,the 670 Hz resonant frequency accelerometer can reach resolution of 2.6 μg/(Hz)1/2 at 2 Hz and 6 μg bias instability,and 1300 Hz accelerometer can achieve 5μg/(Hz)1/2 at 2 Hz and 31 μg bias instability.Both accelerometers have flat spectrum profile from 2 Hz to 15 Hz.
