This work presents a unique and robust approach for validation of using the box-triangular germanium profile in the base of SiGe heterojunction bipolar transistors, where the methodology considers the simultaneous opt...This work presents a unique and robust approach for validation of using the box-triangular germanium profile in the base of SiGe heterojunction bipolar transistors, where the methodology considers the simultaneous optimization of the p-type base doping profile in conjunction with the germanium profile in the base. The study analyses the electron motion across the SiGe base in SiGe HBTs, owing to different accelerating electric fields. The analysis first presents a figure of merit, to achieve the minimum electron transit time across the base in conjunction with the increased current gain in n-p-n-SiGe HBTs, which shows a general trend vis-a-vis the advantage of a trapezoid germanium profile, but with additional accuracy as we considered simultaneously optimized p-type base doping. The effect of minority carrier velocity saturation is then included to make the study more detailed. The analysis then investigates the shifted germanium profile in the base to further minimize the base transit time. Finally, it is shown that a shifted germanium profile eventually evolves into a box-triangular Ge-profile in the SiGe base, which could simultaneously minimize the base transit time and reduce emitter delay by virtue of the high current gain. The analysis verifies that for an average Ge-dose of 7.5% Ge across the base, a box-triangular germanium profile in conjunction with an optimum base doping profile has an approximately identical base transit time and a 30% higher current gain, in comparison with an optimum base doping and triangular Ge-profile across the whole base.展开更多
The doping profile function of a double base epilayer is constructed according to drift-diffusion theory. Then an analytical model for the base transit time τb is developed assuming a small-level injection based on t...The doping profile function of a double base epilayer is constructed according to drift-diffusion theory. Then an analytical model for the base transit time τb is developed assuming a small-level injection based on the characteristics of the 4H-SiC material and the principle of the 4H-SiC BJTs. The device is numerically simulated and validated based on two-dimensional simulation models. The results show that the built-in electric field generated by the double base epilayer configuration can accelerate the carriers when transiting the base region and reduce the base transit time. From the simulation results, the base transit time reaches a minimal value when the ratio of L2/L1 is about 2.展开更多
Heterojunction Bipolar Transistors with SiGe base and Si emitter and collector have increasingly become important in high speed applications in electronics due to better performance of these devices with a modest incr...Heterojunction Bipolar Transistors with SiGe base and Si emitter and collector have increasingly become important in high speed applications in electronics due to better performance of these devices with a modest increase in complexity of fabrication process. Speed of these devices is mainly determined by transit time of minority carriers across the device. Base transit time is the most important component of the total transit time. An analytical model is developed here to predict the variation of base transit time with Ge content, base doping concentration, temperature, and other device parameters. Studies have been made for both uniform and exponential doping distributions with different Ge profiles in the base region. Band gap narrowing effect due to high doping concentration is also taken into account in the model.展开更多
文摘This work presents a unique and robust approach for validation of using the box-triangular germanium profile in the base of SiGe heterojunction bipolar transistors, where the methodology considers the simultaneous optimization of the p-type base doping profile in conjunction with the germanium profile in the base. The study analyses the electron motion across the SiGe base in SiGe HBTs, owing to different accelerating electric fields. The analysis first presents a figure of merit, to achieve the minimum electron transit time across the base in conjunction with the increased current gain in n-p-n-SiGe HBTs, which shows a general trend vis-a-vis the advantage of a trapezoid germanium profile, but with additional accuracy as we considered simultaneously optimized p-type base doping. The effect of minority carrier velocity saturation is then included to make the study more detailed. The analysis then investigates the shifted germanium profile in the base to further minimize the base transit time. Finally, it is shown that a shifted germanium profile eventually evolves into a box-triangular Ge-profile in the SiGe base, which could simultaneously minimize the base transit time and reduce emitter delay by virtue of the high current gain. The analysis verifies that for an average Ge-dose of 7.5% Ge across the base, a box-triangular germanium profile in conjunction with an optimum base doping profile has an approximately identical base transit time and a 30% higher current gain, in comparison with an optimum base doping and triangular Ge-profile across the whole base.
基金Project supported by the National Natural Science Foundation of China (No.60876061)the Pre-Research Project (No.51308040302)
文摘The doping profile function of a double base epilayer is constructed according to drift-diffusion theory. Then an analytical model for the base transit time τb is developed assuming a small-level injection based on the characteristics of the 4H-SiC material and the principle of the 4H-SiC BJTs. The device is numerically simulated and validated based on two-dimensional simulation models. The results show that the built-in electric field generated by the double base epilayer configuration can accelerate the carriers when transiting the base region and reduce the base transit time. From the simulation results, the base transit time reaches a minimal value when the ratio of L2/L1 is about 2.
文摘Heterojunction Bipolar Transistors with SiGe base and Si emitter and collector have increasingly become important in high speed applications in electronics due to better performance of these devices with a modest increase in complexity of fabrication process. Speed of these devices is mainly determined by transit time of minority carriers across the device. Base transit time is the most important component of the total transit time. An analytical model is developed here to predict the variation of base transit time with Ge content, base doping concentration, temperature, and other device parameters. Studies have been made for both uniform and exponential doping distributions with different Ge profiles in the base region. Band gap narrowing effect due to high doping concentration is also taken into account in the model.
