摘要
对基于SiGe HBT基区本征载流子浓度和电子迁移率依赖于掺杂、基区Ge组分分布和速度饱和效应的基区渡越时间进行了研究。结果表明,相同Ge组分条件下,基区渡越时间bτ随WB由100 nm减薄到50 nm,降低了74.9%;相同WB,Ge组分为0.15比0.1 Ge组分的bτ减小了33.7%。该研究与其他文献的结果相吻合,可为SiGe HBT基区设计提供一定的理论指导。
Based on the theory of intrinsic carrier concentration and electron mobility relying on the base doping concentration and total Ge content in SiGe HBT base, and the velocity saturation effect, SiGe HBT base transit time was studied. The results indicate that rb of SiGe HBT with 50 nm WB is reduced by 74.9% than the one with 100 nm WB if the total Ge content is kept constant; rb of SiGe HBT with total Ge content of 0.15 is reduced by 33.7% than the one with total Ge content of 0.1 if WB is constant. The study is in good agreement with results from other literatures.
出处
《微电子学》
CAS
CSCD
北大核心
2006年第5期608-610,614,共4页
Microelectronics
