A new TFEL material ZnS X O 1-X : Ce 3+ is prepared. The EL brightness of ZnS X O 1-X : Ce 3+ is at least one order higher than that of ZnS: Ce 3+ at the same doping concentration of Ce 3+ . The EL emission wavelength...A new TFEL material ZnS X O 1-X : Ce 3+ is prepared. The EL brightness of ZnS X O 1-X : Ce 3+ is at least one order higher than that of ZnS: Ce 3+ at the same doping concentration of Ce 3+ . The EL emission wavelength of ZnS X O 1-X : Ce 3+ (\%X\%=0.5) ranges from 400 to 600 nm. The emission of ZnS X O 1-X : Ce 3+ may be used as the blue part of white TFEL.展开更多
SrGa-2S-4∶Ce blue TFEL device with a novel structure was prepared by electron beam evaporation. The dielectric constant of insulator layer in this structure is far less than that in the conventional structure, so the...SrGa-2S-4∶Ce blue TFEL device with a novel structure was prepared by electron beam evaporation. The dielectric constant of insulator layer in this structure is far less than that in the conventional structure, so the hot-electrons can be accelerated in SiO-2 layers. The stable TFEL with good chromaticity was achieved and the basic characteristics were investigated.展开更多
文摘A new TFEL material ZnS X O 1-X : Ce 3+ is prepared. The EL brightness of ZnS X O 1-X : Ce 3+ is at least one order higher than that of ZnS: Ce 3+ at the same doping concentration of Ce 3+ . The EL emission wavelength of ZnS X O 1-X : Ce 3+ (\%X\%=0.5) ranges from 400 to 600 nm. The emission of ZnS X O 1-X : Ce 3+ may be used as the blue part of white TFEL.
文摘SrGa-2S-4∶Ce blue TFEL device with a novel structure was prepared by electron beam evaporation. The dielectric constant of insulator layer in this structure is far less than that in the conventional structure, so the hot-electrons can be accelerated in SiO-2 layers. The stable TFEL with good chromaticity was achieved and the basic characteristics were investigated.
