摘要
本文合成了 Gd3Ga5 O1 2 :Ag材料 ;用电子束蒸发制备成交流的薄膜电致发光器件 ,采取 X光衍射的方法分析了材料的结晶度及成份 ;器件得到了较好的蓝紫色发光 ,发光峰位于 397nm和肩峰 46 7nm;通过对掺和不掺发光中心材料的吸收光谱和光致发光的研究 ,得出 397nm和 46 7nm分别来自于氧空位和 Ag+的发光。
The thin film electroluminescence devices based on Gd 3Ga 5O 12 :Ag were prepared by electron beam evaporation.The component and the crystallinity of phosphor are determined by X ray diffraction.We have obtained a good UV Blue EL emission with a peak at 397 nm and a shoulder at 467 nm.By investigated the absorption spectra and photoluminescence.we conclude that the electroluminescence spectra located at 390 nm and 467 nm are originated from the oxide vacancies and 4d 95s 0 to 4d 10 of Ag +,respectively.
出处
《光电子．激光》
EI
CAS
CSCD
2000年第6期567-569,共3页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目!(199740 0 2 )
