High electron mobility transistors(HEMT) have the potential to be used as high-sensitivity and realtime biosensors. HEMT biosensors have great market prospects. For the application of HEMT biosensors, the electric pro...High electron mobility transistors(HEMT) have the potential to be used as high-sensitivity and realtime biosensors. HEMT biosensors have great market prospects. For the application of HEMT biosensors, the electric properties consistency of the inter-chip performance have an important influence on the stability and repeatability of the detection. In this research, we fabricated GaAs/AlGaAs HEMT biosensors of different epitaxial structures and device structures to study the electric properties consistency. We study the relationship between channel size and consistency. We investigated the distribution of device current with location on 2 inch GaAs wafer. Based on the studies, the optimal device of a GaAs HEMT biosensor is an A-type epitaxial structure, and a U-type device structure, L = 40μm, W= 200 μm.展开更多
With rapid development communication system, high signal to noise ratio （SNR） system is required. In high frequency bandwidth, high loss, low Q inductors and high noise figure is a significant challenge with on-chip...With rapid development communication system, high signal to noise ratio （SNR） system is required. In high frequency bandwidth, high loss, low Q inductors and high noise figure is a significant challenge with on-chip monolithic microwave integrated circuits （MMICs）. To overcome this problem, high Q, low loss transmission line characteristics was analyzed. Compared with the same inductor value of the lumped component and the transmission line, it has a higher Q value and lower loss performance in high frequency, and a 2-stage common-source low noise amplifier （LNA） was presented, which employs source inductor feedback technology and high Q low loss transmission line matching network technique with over 17.6 dB small signal gain and 1.1 dB noise figure in 15 GHz-18 GHz. The LNA was fabricated by WIN semiconductors company 0.15 μm gallium arsenide （GaAs） P high electron mobility transistor （P-HEMT） process. The total Current is 15 mA, while the DC power consumption is only 45 mW.展开更多
基金Project supported by the National Key Research and Development Program of China(No.2017YFB0405400)the Open Research Fund Program of the State Key Laboratory of Virology of China(No.2017IOV002)+1 种基金the National Natural Science Foundation of China(Nos.61274049,61404130,61574140)the Shenzhen Science and Technology Innovation Commission(No.JSGG20160608100922614)
文摘High electron mobility transistors(HEMT) have the potential to be used as high-sensitivity and realtime biosensors. HEMT biosensors have great market prospects. For the application of HEMT biosensors, the electric properties consistency of the inter-chip performance have an important influence on the stability and repeatability of the detection. In this research, we fabricated GaAs/AlGaAs HEMT biosensors of different epitaxial structures and device structures to study the electric properties consistency. We study the relationship between channel size and consistency. We investigated the distribution of device current with location on 2 inch GaAs wafer. Based on the studies, the optimal device of a GaAs HEMT biosensor is an A-type epitaxial structure, and a U-type device structure, L = 40μm, W= 200 μm.
文摘With rapid development communication system, high signal to noise ratio （SNR） system is required. In high frequency bandwidth, high loss, low Q inductors and high noise figure is a significant challenge with on-chip monolithic microwave integrated circuits （MMICs）. To overcome this problem, high Q, low loss transmission line characteristics was analyzed. Compared with the same inductor value of the lumped component and the transmission line, it has a higher Q value and lower loss performance in high frequency, and a 2-stage common-source low noise amplifier （LNA） was presented, which employs source inductor feedback technology and high Q low loss transmission line matching network technique with over 17.6 dB small signal gain and 1.1 dB noise figure in 15 GHz-18 GHz. The LNA was fabricated by WIN semiconductors company 0.15 μm gallium arsenide （GaAs） P high electron mobility transistor （P-HEMT） process. The total Current is 15 mA, while the DC power consumption is only 45 mW.
