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基于GaAs HEMT的低温低噪声放大器设计

Design of low temperature and low noise amplifier based on GaAs HEMT
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摘要 本文基于商业级的高电子迁移率GaAs HEMT,使用ADS软件仿真设计了一款C波段低温低噪声放大器。基于极低温测试平台并使用低温衰减器法对低温放大器的噪声进行了高精度测试,结果表明:该放大器能够工作在4 K液氦温区,等效噪声温度低至7 K以下,增益大于30 dB,功耗优于30 mW。可以应用于量子计算、射电天文等对噪声、功耗、体积有高要求的领域。 A new type of C-band low temperature and low noise amplifier was designed based on commercial-grade high electron mobility GaAs HEMT and simulated by ADS software.Based on the extremely low temperature test platform and the cryogenic attenuator method,the noise of the cryogenic amplifier was tested with high precision.The results show that the amplifier can operate in the 4 K liquid helium temperature range,the equivalent noise temperature is as low as 7 K,the gain is greater than 30 dB,and the power consumption is better than 30 mW.It can be applied to quantum computing,radio astronomy,and other fields that have high requirements for noise,power consumption,and volume.
作者 张诚 詹超 刘玲玲 潘北军 丁晓杰 何川 李娇娇 王自力 吴志华 Zhang Cheng;Zhan Chao;Liu Linging;Pan Beijun;Ding Xiaojie;He Chuan;Li Jiaojiao;Wang Zii;Wu Zhihua(The 16th Institute of CETC,Hefei 230043,China)
出处 《低温与超导》 CAS 北大核心 2024年第5期31-35,43,共6页 Cryogenics and Superconductivity
基金 合肥市关键核心技术攻关项目(2023-0811160010120230090) 中国电子科技集团公司国际科技合作专项项目(51160020210012KDD)。
关键词 GaAs HEMT 低温低噪声 放大器 C波段 量子计算 GaAs HEMT Low temperature and low noise Amplifier C-Band Quantum computing
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