This study presents a method based on the experimental measurement of the short-circuit current (Icc) and the open circuit voltage (Vco) of the solar cell. It permits the determination of recombination parameters such...This study presents a method based on the experimental measurement of the short-circuit current (Icc) and the open circuit voltage (Vco) of the solar cell. It permits the determination of recombination parameters such as: diffusion length (L), back surface recombination velocity (Sb), intrinsic junction recombination velocity (Sjo), and macroscopic parameters in particular, the shunt and series resistances of a bifacial solar cell for various illumination levels (n). Illumination level effects on macroscopic parameters are highlighted.展开更多
The efficiency of a silicon solar cell is directly linked to the quantity of carrier photogenerated in its base. It increases with the increase of the quantity of carrier in the base of the solar cell. The carrier den...The efficiency of a silicon solar cell is directly linked to the quantity of carrier photogenerated in its base. It increases with the increase of the quantity of carrier in the base of the solar cell. The carrier density in the base of the solar cell increases with the increase of the flux of photons that crosses the solar cell. One of the methods used to increase the flux of photon on the illuminated side of the solar cell is the intensification of the illumination light. However, the intensification of the light come with the increase of the energy released by thermalization, the collision between carriers, their braking due to the carriers concentration gradient electric field which lead to increase the temperature in the base of the solar cell. This work presents a 3-D study, of the effect of the temperature on the electronic parameters of a polycrystalline silicon solar under intense light illumination. The electronic parameters on which we analyze the temperature effect are:?the mobility of solar cell carriers?(electrons and holes),?their diffusion coefficient, their diffusion length and their distribution in the bulk of the base. To study the effect of the temperature on electronic parameters, we take into account, the dependence of carriers (electrons and holes) mobility with the temperature (μn,(T)?μp(T)). Then, the resolution of the continuity equation,which is a function of the carriers gradient electric field and the carriers mobility,?leads to the expressions of?the diffusion coefficient, the diffusion length, and the density of carriers which are function of the temperature. Then, we studied the effects of the temperature on the diffusion parameters in order to explain their effect on the behavior the carriers distribution in intermediate, short circuit and open circuit operating modes at several positions in the base depth. It appears through this study that the diffusion coefficient and the diffusion length decrease with the increase of the temperature. We observe also that with the increase of展开更多
A novel approach to compute diffusion lengths in solar cells is presented. Thus, a simulation is done; it aims to give computational support to the general development of a neural networks （NNs）, which is a very pow...A novel approach to compute diffusion lengths in solar cells is presented. Thus, a simulation is done; it aims to give computational support to the general development of a neural networks （NNs）, which is a very powerful predictive modelling technique used to predict the diffusion length in mono-crystalline silicon solar cells. Furthermore, the computation of the diffusion length and the comparison with measurement data, using the infrared injection method, are presented and discussed.展开更多
Diffusion-length calculations of neutrons are performed using the Chebyshev polynomials of the second kind. The neutrons are assumed to move with constant energy in a uniform homogeneous slab. An alternative scatterin...Diffusion-length calculations of neutrons are performed using the Chebyshev polynomials of the second kind. The neutrons are assumed to move with constant energy in a uniform homogeneous slab. An alternative scattering kernel called an Anl?–Gngr phase function and a traditional Henyey–Greenstein phase function are used for the scattering function in the stationary neutron transport equation. First, analytic expressions and then numerical results are obtained for the diffusion length for various values of the scattering and cross-sectional parameters.Numerical results obtained from both scattering kernels for the diffusion length of the neutrons are given in tables side by side for comparison. The applicability of the method is easily demonstrated by these results.展开更多
文摘This study presents a method based on the experimental measurement of the short-circuit current (Icc) and the open circuit voltage (Vco) of the solar cell. It permits the determination of recombination parameters such as: diffusion length (L), back surface recombination velocity (Sb), intrinsic junction recombination velocity (Sjo), and macroscopic parameters in particular, the shunt and series resistances of a bifacial solar cell for various illumination levels (n). Illumination level effects on macroscopic parameters are highlighted.
文摘The efficiency of a silicon solar cell is directly linked to the quantity of carrier photogenerated in its base. It increases with the increase of the quantity of carrier in the base of the solar cell. The carrier density in the base of the solar cell increases with the increase of the flux of photons that crosses the solar cell. One of the methods used to increase the flux of photon on the illuminated side of the solar cell is the intensification of the illumination light. However, the intensification of the light come with the increase of the energy released by thermalization, the collision between carriers, their braking due to the carriers concentration gradient electric field which lead to increase the temperature in the base of the solar cell. This work presents a 3-D study, of the effect of the temperature on the electronic parameters of a polycrystalline silicon solar under intense light illumination. The electronic parameters on which we analyze the temperature effect are:?the mobility of solar cell carriers?(electrons and holes),?their diffusion coefficient, their diffusion length and their distribution in the bulk of the base. To study the effect of the temperature on electronic parameters, we take into account, the dependence of carriers (electrons and holes) mobility with the temperature (μn,(T)?μp(T)). Then, the resolution of the continuity equation,which is a function of the carriers gradient electric field and the carriers mobility,?leads to the expressions of?the diffusion coefficient, the diffusion length, and the density of carriers which are function of the temperature. Then, we studied the effects of the temperature on the diffusion parameters in order to explain their effect on the behavior the carriers distribution in intermediate, short circuit and open circuit operating modes at several positions in the base depth. It appears through this study that the diffusion coefficient and the diffusion length decrease with the increase of the temperature. We observe also that with the increase of
文摘A novel approach to compute diffusion lengths in solar cells is presented. Thus, a simulation is done; it aims to give computational support to the general development of a neural networks （NNs）, which is a very powerful predictive modelling technique used to predict the diffusion length in mono-crystalline silicon solar cells. Furthermore, the computation of the diffusion length and the comparison with measurement data, using the infrared injection method, are presented and discussed.
基金supported by the Academic Research Projects Unit of Osmaniye Korkut Ata University(No.OKBAP-2014-PT3-019)
文摘Diffusion-length calculations of neutrons are performed using the Chebyshev polynomials of the second kind. The neutrons are assumed to move with constant energy in a uniform homogeneous slab. An alternative scattering kernel called an Anl?–Gngr phase function and a traditional Henyey–Greenstein phase function are used for the scattering function in the stationary neutron transport equation. First, analytic expressions and then numerical results are obtained for the diffusion length for various values of the scattering and cross-sectional parameters.Numerical results obtained from both scattering kernels for the diffusion length of the neutrons are given in tables side by side for comparison. The applicability of the method is easily demonstrated by these results.
