In situ microscale distributions of 02, H2S, pH and redox potential in sediments of Hongfeng Lake, SW China, were investigated using the powerful microsensor technique. Our results show that O2 was depleted within the...In situ microscale distributions of 02, H2S, pH and redox potential in sediments of Hongfeng Lake, SW China, were investigated using the powerful microsensor technique. Our results show that O2 was depleted within the top 3.9 mm in surface sediments, and H2S was subsequently detected at -6.0 mm depth, and reached its maximum concentrations at -25 mm. The degradation of organic matter and reduction of sulfate might be the major pathways of producing H2S in sediments, pH rapidly reduced in surface layers mainly due to H＋ release in the oxidation of organic matter. Eh also decreased sharply in surface sediments, probabl indicating the coexistence of Fe and Mn oxides with O2 in aerobic region. Furthermore, the programme of PROFILE was applied to model the 02 gradient, and good fit was obtained between the simulative values and the factual values both in sediments and in the diffusive boundary layer （DBL）. The results indicate that the depth-integrated O2 consumption rates within sediments were 0.083 and 0.134 nmol·m-3·s-1 in site S1 and site S2, respectively. In addition, there were distinct DBL in two sediment profiles, with 1.2 mm thickness in S1 and 0.9 mm thickness in S2. The diffusive fluxes of O2 within the DBL were 67.13 nmol·m-2·s-1 in S1 and 88.54 nmol·m-2·s-1 in S2.展开更多
Memristor is a newly found fourth circuit element for the next generation emerging nonvolatile memory technology. In this paper, design of new type of nonvolatile static random access memory cell is proposed by using ...Memristor is a newly found fourth circuit element for the next generation emerging nonvolatile memory technology. In this paper, design of new type of nonvolatile static random access memory cell is proposed by using a combination of memristor and complemented metal oxide semiconductor. Biolek memristor model and CMOS 180 nm technology are used to form a single cell. By introducing distinct binary logic to avoid safety margin is left for each binary logic output and enables better read/write data integrity. The total power consumption reduces from 0.407 mw (milli-watt) to 0.127 mw which is less than existing memristor based memory cell of the same CMOS technology. Read and write time is also significantly reduced. However, write time is higher than conventional 6T SRAM cell and can be reduced by increasing motion of electron in the memristor. The change of the memristor state is shown by applying piecewise linear input voltage.展开更多
Objective:To find out the extent of duffy-binding-like(DBL) a gene diversity and the resetting potential of the parasite population in association with severe malaria.Methods:Genotyping of DBLαdomain was done by PCR ...Objective:To find out the extent of duffy-binding-like(DBL) a gene diversity and the resetting potential of the parasite population in association with severe malaria.Methods:Genotyping of DBLαdomain was done by PCR using three sets of primers(FR,F1R2 and F2R2) and the rosetting frequency was assessed by parasite culture followed by ethidium bromide staining and visualization under a fluorescent microscope.Results:The significant association of high parasite density with severe malaria and the positive correlation between rosetting frequency and parasite density in vivo(P = 0.613,P【0.0001) were observed.Moreover,the parasite strains having multiple fragments of F2R2 region and’b’variant of FR region of DBL 1-αshowed increased rosetting frequency and supported the strain specific association of disease severity. Conclusions:The findings suggest that rosetting mediated higher parasitemia might have contributed to the development of severe disease.As the rosetting domain of Plasmodium falciparum erythrocyte membrane protein 1(HEMP1),the DBL a binds to multiple host receptors; the significant association of multiple fragments of F2R2 region with severe malaria suggests several receptor-ligand interactions as the possible mechanisms of pathogenesis.Alternatively, the high percentage distribution of smaller fragments with mild malaria suggests the lack of adequate rosetting epitopes that might have contributed to low rosetting frequency in mild malaria.展开更多
基金supported by the National Natural Science Foundation of China (Nos.41173125 and 41403113)
文摘In situ microscale distributions of 02, H2S, pH and redox potential in sediments of Hongfeng Lake, SW China, were investigated using the powerful microsensor technique. Our results show that O2 was depleted within the top 3.9 mm in surface sediments, and H2S was subsequently detected at -6.0 mm depth, and reached its maximum concentrations at -25 mm. The degradation of organic matter and reduction of sulfate might be the major pathways of producing H2S in sediments, pH rapidly reduced in surface layers mainly due to H＋ release in the oxidation of organic matter. Eh also decreased sharply in surface sediments, probabl indicating the coexistence of Fe and Mn oxides with O2 in aerobic region. Furthermore, the programme of PROFILE was applied to model the 02 gradient, and good fit was obtained between the simulative values and the factual values both in sediments and in the diffusive boundary layer （DBL）. The results indicate that the depth-integrated O2 consumption rates within sediments were 0.083 and 0.134 nmol·m-3·s-1 in site S1 and site S2, respectively. In addition, there were distinct DBL in two sediment profiles, with 1.2 mm thickness in S1 and 0.9 mm thickness in S2. The diffusive fluxes of O2 within the DBL were 67.13 nmol·m-2·s-1 in S1 and 88.54 nmol·m-2·s-1 in S2.
文摘Memristor is a newly found fourth circuit element for the next generation emerging nonvolatile memory technology. In this paper, design of new type of nonvolatile static random access memory cell is proposed by using a combination of memristor and complemented metal oxide semiconductor. Biolek memristor model and CMOS 180 nm technology are used to form a single cell. By introducing distinct binary logic to avoid safety margin is left for each binary logic output and enables better read/write data integrity. The total power consumption reduces from 0.407 mw (milli-watt) to 0.127 mw which is less than existing memristor based memory cell of the same CMOS technology. Read and write time is also significantly reduced. However, write time is higher than conventional 6T SRAM cell and can be reduced by increasing motion of electron in the memristor. The change of the memristor state is shown by applying piecewise linear input voltage.
文摘Objective:To find out the extent of duffy-binding-like(DBL) a gene diversity and the resetting potential of the parasite population in association with severe malaria.Methods:Genotyping of DBLαdomain was done by PCR using three sets of primers(FR,F1R2 and F2R2) and the rosetting frequency was assessed by parasite culture followed by ethidium bromide staining and visualization under a fluorescent microscope.Results:The significant association of high parasite density with severe malaria and the positive correlation between rosetting frequency and parasite density in vivo(P = 0.613,P【0.0001) were observed.Moreover,the parasite strains having multiple fragments of F2R2 region and’b’variant of FR region of DBL 1-αshowed increased rosetting frequency and supported the strain specific association of disease severity. Conclusions:The findings suggest that rosetting mediated higher parasitemia might have contributed to the development of severe disease.As the rosetting domain of Plasmodium falciparum erythrocyte membrane protein 1(HEMP1),the DBL a binds to multiple host receptors; the significant association of multiple fragments of F2R2 region with severe malaria suggests several receptor-ligand interactions as the possible mechanisms of pathogenesis.Alternatively, the high percentage distribution of smaller fragments with mild malaria suggests the lack of adequate rosetting epitopes that might have contributed to low rosetting frequency in mild malaria.
