For process integration considerations,we will investigate the impact of chemical mechanical polishing （CMP） on the electrical characteristics of the pattern Cu wafer.In this paper,we investigate the impacts of the ...For process integration considerations,we will investigate the impact of chemical mechanical polishing （CMP） on the electrical characteristics of the pattern Cu wafer.In this paper,we investigate the impacts of the CMP process with two kinds of slurry,one of which is acid slurry of SVTC and the other is FA/O alkaline slurry purchased from Tianjin Jingling Microelectronic Material Limited.Three aspects were investigated：resistance,capacitance and leakage current.The result shows that after polishing by the slurry of FA/O,the resistance is lower than the SVTC.After polishing by the acid slurry and FA/O alkaline slurry,the difference in capacitance is not very large. The values are 0.1 nF and 0.12 nF,respectively.The leakage current of the film polished by the slurry of FA/O is 0.01 nA,which is lower than the slurry of SVTC.The results show that the slurry of FA/O produced less dishing and oxide loss than the slurry of SVTC.展开更多
CMP设备通过精准过程控制系统(Precision Process Control,PPC)可以精准计算抛光时间。而在这一过程中,需要存储大量的抛光历史数据、晶圆厚度量测数据、计算中间值和模型配置信息等。这些数据信息数量巨大、关系复杂,并且在计算过程中...CMP设备通过精准过程控制系统(Precision Process Control,PPC)可以精准计算抛光时间。而在这一过程中,需要存储大量的抛光历史数据、晶圆厚度量测数据、计算中间值和模型配置信息等。这些数据信息数量巨大、关系复杂,并且在计算过程中需要快速获取相关数据。为了更好地适应了PPC的需求,可利用MySQL数据库对这些数据进行存储管理。通过需求分析和实体关系模型的建立,实现了数据库的设计。最终利用数据库实现了数据的有效管理及快速查询,并在机台稳定运行。展开更多
基金Project supported by the Special Project Items No.2 in the National Long-Term Technology Development Plan,China(No.2009ZX02308)
文摘For process integration considerations,we will investigate the impact of chemical mechanical polishing （CMP） on the electrical characteristics of the pattern Cu wafer.In this paper,we investigate the impacts of the CMP process with two kinds of slurry,one of which is acid slurry of SVTC and the other is FA/O alkaline slurry purchased from Tianjin Jingling Microelectronic Material Limited.Three aspects were investigated：resistance,capacitance and leakage current.The result shows that after polishing by the slurry of FA/O,the resistance is lower than the SVTC.After polishing by the acid slurry and FA/O alkaline slurry,the difference in capacitance is not very large. The values are 0.1 nF and 0.12 nF,respectively.The leakage current of the film polished by the slurry of FA/O is 0.01 nA,which is lower than the slurry of SVTC.The results show that the slurry of FA/O produced less dishing and oxide loss than the slurry of SVTC.
文摘CMP设备通过精准过程控制系统(Precision Process Control,PPC)可以精准计算抛光时间。而在这一过程中,需要存储大量的抛光历史数据、晶圆厚度量测数据、计算中间值和模型配置信息等。这些数据信息数量巨大、关系复杂,并且在计算过程中需要快速获取相关数据。为了更好地适应了PPC的需求,可利用MySQL数据库对这些数据进行存储管理。通过需求分析和实体关系模型的建立,实现了数据库的设计。最终利用数据库实现了数据的有效管理及快速查询,并在机台稳定运行。
基金National Natural Science Foundation of China(50975002)Innovation Team Project of AHUT(TD201204)The Research Project for University Personnel Returning from Overseas Sponsored by the Ministry of Education of China
