For zone-melted （ZM） bismuth telluride-based alloys, which are widely commercially available for solidstate cooling and low-temperature power generation around room temperature, introducing point defects is the chie...For zone-melted （ZM） bismuth telluride-based alloys, which are widely commercially available for solidstate cooling and low-temperature power generation around room temperature, introducing point defects is the chief approach to improve their thermoelectric performance. Herein, we report the multiple effects of Se doping on thermoelectric performance of p-type Bi0.5Sb1,5Te3-xSex ＋ 3 wt% Te ZM ingots, which increases carrier concentration, reduces lattice thermal conductivity and deteriorates the carrier mobility. As a result, the peak figure of merit （ZT） is shifted to a higher temperature and a high ZT 1.2 at 350 K is obtained, due to the reduced thermal conductivity and suppressed intrinsic conduction. Further, decreasing Sb content is followed to optimize the room temperature performance and a ZT - 1.1 at 300 K is obtained. These results are significant for designing and optimizing the thermoelectric performance of commercial Bi0.5Sb1.5Te3＋ 3 wt% Te ZM alloys.展开更多
An automated thin-layer flow cell electrodeposition system was developed for growing Bi2Te3 thin film by ECALE. The dependence of the Bi and Te deposition potentials on Pt electrode was studied. In the first attempt, ...An automated thin-layer flow cell electrodeposition system was developed for growing Bi2Te3 thin film by ECALE. The dependence of the Bi and Te deposition potentials on Pt electrode was studied. In the first attempt, this reductive Te underpotential deposition （UPD）/reductive Bi UPD cycle was performed to 100 layers. A better linearity of the stripping charge with the number of cycles has been shown and confirmed a layer-by-layer growth mode, which is consistent with an epitaxial growth. The 4∶3 stoichiometric ratio of Bi to Te suggests that the incomplete charge transfer in HTeO+2 reduction excludes the possibility of Bi2Te3 formation. X-ray photoelectron spectroscopy （XPS） analysis also reveals that the incomplete charge transfer in HTeO+2 occurs in Te direct deposition. The effective way of depositing Bi2Te3 on Pt consists in oxidative Te UPD and reductive Bi UPD. The thin film deposited by this procedure was characterized by X-ray diffraction（XRD）, scanning electron microscopy（SEM） and X-ray photoelectron spectroscopy（XPS）. A polycrystalline characteristic was confirmed by XRD. The 2∶3 stoichiometric ratio was confirmed by XPS. The SEM image indicates that the deposit looks like a series of buttons about （0.30.4 μm） in diameter, which is corresponding with calculated thickness of the epitaxial film. This suggests that the particle growth appears to be linear with the number of cycles, as it is consistent with a layer by layer growth mode.展开更多
The much slower progress in enhancing the thermoelectric performance of n-type Bi2Te3 than that of p-type Bi2Te3 based materials in the past decade hinders the widespread use in power generation and refrigeration. Her...The much slower progress in enhancing the thermoelectric performance of n-type Bi2Te3 than that of p-type Bi2Te3 based materials in the past decade hinders the widespread use in power generation and refrigeration. Here, a facile bottom-up solution-synthesis with spark plasma sintering(SPS) process has been developed to build n-type Bi2Te3-xSex bulk nanocomposites, which substantially improves the power factor and decreases the lattice thermal conductivity by tuning the interface scattering of phonons and electrons. The stoichiometric composition in ternary Bi2Te3-xSex nanocomposites is also tuned to optimize the carrier concentration and lattice thermal conductivity. The optimized bulk nanocomposite Bi2Te2.7Se0.3 exhibits a ZT of 1.1 at^371 K, which is comparable to the corresponding commercially available ingots. Our results demonstrate the great potential of the solution-processed n-type Bi2Te3-xSex nanocomposites for cost-effective thermoelectric applications.展开更多
We report on the fabrication and characterization of multi-leg bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric devices. The two materials were deposited, on top of SiO2/Si substrates, using P...We report on the fabrication and characterization of multi-leg bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric devices. The two materials were deposited, on top of SiO2/Si substrates, using Pulsed Laser Deposition (PLD). The SiO2 layer was used to provide insulation between the devices and the Si wafer. Copper was used as an electrical connector and a contact for the junctions. Four devices were built, where the Bi2Te3 and Sb2Te3 were deposited at substrate temperatures of 100°C, 200°C, 300°C and 400°C. The results show that the device has a voltage sensitivity of up to 146 μV/K and temperature sensitivity of 6.8 K/mV.展开更多
基金supported by the National Natural Science Foundation of China (Nos. 61534001 and 11574267)the National Science Fund for Distinguished Young Scholars (No.51725102)
文摘For zone-melted （ZM） bismuth telluride-based alloys, which are widely commercially available for solidstate cooling and low-temperature power generation around room temperature, introducing point defects is the chief approach to improve their thermoelectric performance. Herein, we report the multiple effects of Se doping on thermoelectric performance of p-type Bi0.5Sb1,5Te3-xSex ＋ 3 wt% Te ZM ingots, which increases carrier concentration, reduces lattice thermal conductivity and deteriorates the carrier mobility. As a result, the peak figure of merit （ZT） is shifted to a higher temperature and a high ZT 1.2 at 350 K is obtained, due to the reduced thermal conductivity and suppressed intrinsic conduction. Further, decreasing Sb content is followed to optimize the room temperature performance and a ZT - 1.1 at 300 K is obtained. These results are significant for designing and optimizing the thermoelectric performance of commercial Bi0.5Sb1.5Te3＋ 3 wt% Te ZM alloys.
基金supported by the National Natural Science Foundation of China (51802029)the Scientific Research for the Introduction of Talents of Changsha University (SF1606)。
基金Project(50401008) supported by the Chinese National Natural Science Foundation Project(2004CCA03200) supportedby the National Basic Research Program
文摘An automated thin-layer flow cell electrodeposition system was developed for growing Bi2Te3 thin film by ECALE. The dependence of the Bi and Te deposition potentials on Pt electrode was studied. In the first attempt, this reductive Te underpotential deposition （UPD）/reductive Bi UPD cycle was performed to 100 layers. A better linearity of the stripping charge with the number of cycles has been shown and confirmed a layer-by-layer growth mode, which is consistent with an epitaxial growth. The 4∶3 stoichiometric ratio of Bi to Te suggests that the incomplete charge transfer in HTeO+2 reduction excludes the possibility of Bi2Te3 formation. X-ray photoelectron spectroscopy （XPS） analysis also reveals that the incomplete charge transfer in HTeO+2 occurs in Te direct deposition. The effective way of depositing Bi2Te3 on Pt consists in oxidative Te UPD and reductive Bi UPD. The thin film deposited by this procedure was characterized by X-ray diffraction（XRD）, scanning electron microscopy（SEM） and X-ray photoelectron spectroscopy（XPS）. A polycrystalline characteristic was confirmed by XRD. The 2∶3 stoichiometric ratio was confirmed by XPS. The SEM image indicates that the deposit looks like a series of buttons about （0.30.4 μm） in diameter, which is corresponding with calculated thickness of the epitaxial film. This suggests that the particle growth appears to be linear with the number of cycles, as it is consistent with a layer by layer growth mode.
基金supported by the Natural Science Foundation of SZU (2017003)Shenzhen Science and Technology Research Grant (JCYJ20150324141711684)+2 种基金Singapore National Research Foundation (NRF-RF2009-06)an Investigator-ship Award (NRFNRFI2015-03)Ministry of Education (Singapore) via an AcRF Tier2 Grant (MOE2012-T2-2-086)
文摘The much slower progress in enhancing the thermoelectric performance of n-type Bi2Te3 than that of p-type Bi2Te3 based materials in the past decade hinders the widespread use in power generation and refrigeration. Here, a facile bottom-up solution-synthesis with spark plasma sintering(SPS) process has been developed to build n-type Bi2Te3-xSex bulk nanocomposites, which substantially improves the power factor and decreases the lattice thermal conductivity by tuning the interface scattering of phonons and electrons. The stoichiometric composition in ternary Bi2Te3-xSex nanocomposites is also tuned to optimize the carrier concentration and lattice thermal conductivity. The optimized bulk nanocomposite Bi2Te2.7Se0.3 exhibits a ZT of 1.1 at^371 K, which is comparable to the corresponding commercially available ingots. Our results demonstrate the great potential of the solution-processed n-type Bi2Te3-xSex nanocomposites for cost-effective thermoelectric applications.
文摘We report on the fabrication and characterization of multi-leg bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric devices. The two materials were deposited, on top of SiO2/Si substrates, using Pulsed Laser Deposition (PLD). The SiO2 layer was used to provide insulation between the devices and the Si wafer. Copper was used as an electrical connector and a contact for the junctions. Four devices were built, where the Bi2Te3 and Sb2Te3 were deposited at substrate temperatures of 100°C, 200°C, 300°C and 400°C. The results show that the device has a voltage sensitivity of up to 146 μV/K and temperature sensitivity of 6.8 K/mV.
