As the large single-crystalline silicon wafers have revolutionized many industries including electronics and solar cells, it is envisioned that the availability of large single-crystalline perovskite crystals and wafe...As the large single-crystalline silicon wafers have revolutionized many industries including electronics and solar cells, it is envisioned that the availability of large single-crystalline perovskite crystals and wafers will revolutionize its broad applications in photovoltaics, optoelectronics, lasers, photodetectors, light emitting diodes(LEDs), etc. Here we report a method to grow large single-crystalline perovskites including single-halide crystals: CH3NH3PbX3(X=I, Br, Cl), and dual-halide ones:CH3NH3Pb(ClxBr1.x)3 and CH3NH3Pb(BrxI1.x)3, with the largest crystal being 120 mm in length. Meanwhile, we have advanced a process to slice the large perovskite crystals into thin wafers. It is found that the wafers exhibit remarkable features:(1)its trap-state density is a million times smaller than that in the microcrystalline perovskite thin films(MPTF);(2) its carrier mobility is 410 times higher than its most popular organic counterpart P3HT;(3) its optical absorption is expanded to as high as910 nm comparing to 797 nm for the MPTF;(4) while MPTF decomposes at 150 °C, the wafer is stable at high temperature up to270 °C;(5) when exposed to high humidity(75% RH), MPTF decomposes in 5 h while the wafer shows no change for overnight;(6) its photocurrent response is 250 times higher than its MPTF counterpart. A few electronic devices have been fabricated using the crystalline wafers. Among them, the Hall test gives low carrier concentration with high mobility. The trap-state density is measured much lower than common semiconductors. Moreover, the large SC-wafer is found particularly useful for mass production of integrated circuits. By adjusting the halide composition, both the optical absorption and the light emission can be fine-tuned across the entire visible spectrum from 400 nm to 800 nm. It is envisioned that a range of visible lasers and LEDs may be developed using the dual-halide perovskites. With fewer trap states, high mobility, broader absorption, and humidity resistance, it is expected that solar cells wi展开更多
As one of the most promising materials for two-dimensional transition metal chalcogenides(2D TMDs),molybdenum diselenide(MoSe_(2))has great potential in photodetectors due to its excellent properties like tunable band...As one of the most promising materials for two-dimensional transition metal chalcogenides(2D TMDs),molybdenum diselenide(MoSe_(2))has great potential in photodetectors due to its excellent properties like tunable bandgap,high carrier mobility,and excellent air stability.Although 2D MoSe_(2)-based photodetectors have been reported to exhibit admired performance,the large-area 2D MoSe_(2)layers are difficult to be achieved via conventional synthesis methods,which severely impedes its future applications.Here,we present the controllable growth of large-area 2D MoSe_(2)layers over 3.5-inch with excellent homogeneity by a simple post-selenization route.Further,a high-quality n-MoSe_(2)/p-Si van der Waals(vdW)heterojunction device is in-situ fabricated by directly growing 2D n-MoSe_(2)layers on the patterned p-Si substrate,which shows a self-driven broadband photoresponse ranging from ultraviolet to mid-wave infrared with an impressive responsivity of 720.5 mA·W^(−1),a high specific detectivity of 10^(13) Jones,and a fast response time to follow nanosecond pulsed optical signal.In addition,thanks to the inch-level 2D MoSe_(2)layers,a 4×4 integrated heterojunction device array is achieved,which has demonstrated good uniformity and satisfying imaging capability.The large-area 2D MoSe_(2)layer and its heterojunction device array have great promise for high-performance photodetection and imaging applications in integrated optoelectronic systems.展开更多
A 10 × 10 solar-blind ultraviolet(UV) imaging array with double-layer wire structure was prepared based on Ga_(2)O_(3) film grown by atomic layer deposition. These single detection units in the array exhibit exce...A 10 × 10 solar-blind ultraviolet(UV) imaging array with double-layer wire structure was prepared based on Ga_(2)O_(3) film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-todark current ratio(PDCR) of 5.5 × 10^(5), responsivity(R) of 4.28 A/W, external quantum efficiency(EQE) of 2.1 × 10^(3)%, detectivity(D*) of 1.5 × 10^(14) Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 ℃, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga_(2)O_(3) solarblind UV detectors.展开更多
In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various a...In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various applications.This study introduces a sophisticated design for a solar-blind ultraviolet(UV)detector array using linear In-doped Ga_(2)O_(3) (InGaO)modulated by platinum(Pt)nanoparticles(PtNPs).The construction of this array involves depositing a thin film of Ga_(2)O_(3) through the plasmonenhanced chemical vapor deposition(PECVD)technique.Subsequently,PtNPs were synthesized via radio-frequency magnetron sputtering and annealing process.The performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot electrons.This process is facilitated by non-radiative decay processes induced by PtNPs.Notably,the array achieves maximum responsivity(R)of 353 mA/W,external quantum efficiency(EQE)of 173%,detectivity(D*)of approximately 10~(13)Jones,and photoconductive gain of 1.58.In addition,the standard deviation for photocurrent stays below17%for more than 80%of the array units within the array.Subsequently,the application of this array extends to photon detection in the deep-UV(DUV)range.This includes critical areas such as imaging sensing and water quality monitoring.By leveraging surface plasmon coupling,the array achieves high-performance DUV photon detection.This approach enables a broad spectrum of practical applications,underscoring the significant potential of this technology for the advancement of DUV detectors.展开更多
Photodetectors with long detection distances and fast response are important media in constructing a non-contact human-machine interface for the Masterly Internet of Things(MIT).All-inorganic perovskites have excellen...Photodetectors with long detection distances and fast response are important media in constructing a non-contact human-machine interface for the Masterly Internet of Things(MIT).All-inorganic perovskites have excellent optoelectronic performance with high moisture and oxygen resistance,making them one of the promising candidates for high-performance photodetectors,but a simple,low-cost and reliable fabrication technology is urgently needed.Here,a dual-function laser etching method is developed to complete both the lyophilic split-ring structure and electrode patterning.This novel split-ring structure can capture the perovskite precursor droplet efficiently and achieve the uniform and compact deposition of CsPbBr3 films.Furthermore,our devices based on laterally conducting split-ring structured photodetectors possess outstanding performance,including the maximum responsivity of 1.44×105 mA W^(−1),a response time of 150μs in 1.5 kHz and one-unit area<4×10-2 mm2.Based on these split-ring photodetector arrays,we realized three-dimensional gesture detection with up to 100 mm distance detection and up to 600 mm s^(−1) speed detection,for low-cost,integrative,and non-contact human-machine interfaces.Finally,we applied this MIT to wearable and flexible digital gesture recognition watch panel,safe and comfortable central controller integrated on the car screen,and remote control of the robot,demonstrating the broad potential applications.展开更多
Combining the strategies of introducing larger heteroatom,regio-regular backbone and extended branching position of side-chain,we developed polymer semiconductors(PPCPD)with narrow band-gap to construct the photosensi...Combining the strategies of introducing larger heteroatom,regio-regular backbone and extended branching position of side-chain,we developed polymer semiconductors(PPCPD)with narrow band-gap to construct the photosensing layer of thin-film photodiodes and image arrays.The spectral response of the resulting organic photodiodes spans from the near ultra-violet to short-wavelength infrared region.The performance of these short-wavelength infrared photodiodes in 900–1200 nm range achieved a level competitive with that of indium gallium arsenide-based inorganic crystalline detectors,exhibiting a specific detectivity of 5.55×1012 Jones at 1.15µm.High photodetectivity and quantum efficiency in photodiode with amorphous/nanocrystalline thin-films of 100–200 nm thickness enabled high pixel-density image arrays without pixel-level-patterning in the sensing layer.1×256 linear diode arrays with 25µm×25µm pixel pitch were achieved,enabling high pixel-density short-wavelength infrared imaging at room temperature.展开更多
Ga_(2)O_(3)has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost.Although semiconductor microwires(MWs)possess unique optical and electronic characteristi...Ga_(2)O_(3)has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost.Although semiconductor microwires(MWs)possess unique optical and electronic characteristics,the performances of photodetectors developed from Ga_(2)O_(3)MWs are still less than satisfactory.Herein,we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga_(2)O_(3)MWs,possessing a light/dark current ratio of 107 and a responsivity of 2,409 A/W at 40 V.Moreover,a 1×10 solar-blind photodetector linear array is developed based on the Sn-doped Ga_(2)O_(3)MWs via a patternedelectrodes method.And clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solarblind imaging system.The results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga_(2)O_(3)MWs,and thus may push forward their future applications.展开更多
Narrowband photodetectors as specific spectral sensing pixels have drawn intense attention in multispectral detection due to their distinct characteristic of filter-free spectrum discrimination,in which the emerging h...Narrowband photodetectors as specific spectral sensing pixels have drawn intense attention in multispectral detection due to their distinct characteristic of filter-free spectrum discrimination,in which the emerging halide lead perovskites witness a booming development in their performance and wavelength-selectivity from blue to near-infrared light.However,the challenge in integrating perovskite narrowband photodetectors on one chip imposes an impediment on practical application.In this work,the combination of laser-direct-writing and ion exchange is proposed as an efficient way to fabricate high-definition colorful sensing array with perovskite narrowband photodetector unit as pixel.Under laser irradiation,the photolysis of halocarbon solvent(CHCl_(3),CH_(3)CH_(2)I,etc)releases the halide ions,which brings the ion exchange and gives rise to slow-varying bandgap in single perovskite photoactive film.This ion exchange can be controlled via laser irradiation time and focus point,thus enabling precisely engineerable bandgap.By optimizing the process,it is successfully applied to develop patterned perovskite narrow blue and green photodetectors array with a high-definition of~53 ppi.We believe this result will make a great step forward to integrate multifunctional perovskite devices on one chip,which will pave the way for perovskite optoelectronic device to the commercial application.展开更多
In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing application.The 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor depositio...In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing application.The 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor deposition technique;and the photodetector array was fabricated through ultraviolet photolithography,lift-off,and electron-beam evaporation.In addition to the high solar-blind/visible rejection ratio of 104,every photodetector cell in the array has high performance and fast response speed,such as responsivity of 49.4 A W^(-1),specific detectivity of 6.8×10^(14)Jones,external quantum efficiency of 1.9×10^(4)%,linear dynamic range of 117.8 d B,and response time of 41 ms,respectively,indicating the high photo-response performance of the photodetector.Moreover,the photodetector array displayed uniform responsivity with a standard deviation of~6%,and presented a sensing image of low chromatic aberration,owing to the high resolution of the photodetector array.In a word,this work may contribute to developing Ga_(2)O_(3)-based optoelectronic device applications.展开更多
A monolithic integrated ultraviolet-infrared(UV-IR) dual-color photodetector based on graphene/GaN heterojunction was fabricated by vertically integrating a GaN nanowire array on a silicon substrate with monolayer gra...A monolithic integrated ultraviolet-infrared(UV-IR) dual-color photodetector based on graphene/GaN heterojunction was fabricated by vertically integrating a GaN nanowire array on a silicon substrate with monolayer graphene. The device detects UV and IR lights by different mechanisms. The UV detection is accomplished by the forbidden band absorption of GaN, and the IR detection is realized by the free electron absorption of graphene. At peak wavelengths of 360 nm and 1540 nm, the detector has responsivities up to 6.93 A/W and 0.11 A/W, detection efficiencies of 1.23 × 1012 cm·Hz1/2·W-1 and 1.88 × 1010 cm·Hz1/2·W-1, respectively,and a short response time of less than 3 ms.展开更多
We have provided optical simulations of the evanescently coupled waveguide photodiodes integrated with a 13- channels AWGs. The photodiode could exhibit high internal efficiency by appropriate choice of layers geometr...We have provided optical simulations of the evanescently coupled waveguide photodiodes integrated with a 13- channels AWGs. The photodiode could exhibit high internal efficiency by appropriate choice of layers geometry and refrac- tive index. Aseamless joint structure has been designed and fabricated for integrating the output waveguides of AWGs with the evanescently coupled waveguide photodiode array. The highest simulation quantum efficiency could achieve 92% when the matching layer thickfiess of the PD is 120 nm and the insertion length is 2 μm. The fabricated PD with 320-nm-thick match.ing layer and 2-μm-length insertion matching layer present a responsivity of 0.87 A/W.展开更多
The investigation on G)s/AlG)s multiple quantum well Self Electro-optic Effec t Device (SEED) arrays for flip\|chip bonding optoelectronic smart pixels has be en reported. In order to increase the absorption of the in...The investigation on G)s/AlG)s multiple quantum well Self Electro-optic Effec t Device (SEED) arrays for flip\|chip bonding optoelectronic smart pixels has be en reported. In order to increase the absorption of the intrinsic region, the number of quantum well periods is defined as 90 pairs. The G)s/AlG)s multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic chara cteristics of elements in SEED arrays.展开更多
Hybrid perovskite possesses excellent photoelectric properties,including large light-absorption capacity and high carrier mobility,and is an ideal light-absorbing material for photoelectric devices.The grain size and ...Hybrid perovskite possesses excellent photoelectric properties,including large light-absorption capacity and high carrier mobility,and is an ideal light-absorbing material for photoelectric devices.The grain size and compactness of hybrid perovskite are key factors affecting the performance of photoelectric devices.The photocurrent and photoresponsivity of these devices are relatively low because of the rapidly recombined photoexcited electron-hole pairs in hybrid perovskite.Herein,we develop a facile two-step chemical vapor deposition(CVD)method to synthesize a high-quality van der Waals(vd Ws)MAPb I3/graphene heterostructure for high-performance image sensor.We introduced inorganic sources(PbI2)to vd Ws epitaxially grown Pb I2 film on a seamless graphene monolayer film template through CVD.Methylammonium iodide(MAI)was then reintroduced to prepare the vd Ws MAPb I3/graphene heterostructure.The MAPb I3 layer is composed of densely packed,large-size grains and displays a smooth surface.High photoresponsivity of 107A/W is achieved in the corresponding photodetector.Inspired by the human visual system,we designed a flexible photodetector array containing(24?24)pixels,achieving perfect image recognition and color discrimination.Our study may greatly facilitate the construction of high-performance optoelectronic devices in artificial retina,biomedical imaging,remote sensing,and optical communication.展开更多
基金supported by the National Key Research Project MOST (2016YFA0202400)the National Natural Science Foundation of China (61604090, 61604091, 61674098)+4 种基金National University Research Fund (GK261001009, GK201603107)the Changjiang Scholar and Innovative Research Team (IRT_14R33)the 111 Project (B14041)the Chinese National 1000-talent-plan Program (1110010341)the Innovation Funds of Graduate Programs, SNNU (2015CXS047)
文摘As the large single-crystalline silicon wafers have revolutionized many industries including electronics and solar cells, it is envisioned that the availability of large single-crystalline perovskite crystals and wafers will revolutionize its broad applications in photovoltaics, optoelectronics, lasers, photodetectors, light emitting diodes(LEDs), etc. Here we report a method to grow large single-crystalline perovskites including single-halide crystals: CH3NH3PbX3(X=I, Br, Cl), and dual-halide ones:CH3NH3Pb(ClxBr1.x)3 and CH3NH3Pb(BrxI1.x)3, with the largest crystal being 120 mm in length. Meanwhile, we have advanced a process to slice the large perovskite crystals into thin wafers. It is found that the wafers exhibit remarkable features:(1)its trap-state density is a million times smaller than that in the microcrystalline perovskite thin films(MPTF);(2) its carrier mobility is 410 times higher than its most popular organic counterpart P3HT;(3) its optical absorption is expanded to as high as910 nm comparing to 797 nm for the MPTF;(4) while MPTF decomposes at 150 °C, the wafer is stable at high temperature up to270 °C;(5) when exposed to high humidity(75% RH), MPTF decomposes in 5 h while the wafer shows no change for overnight;(6) its photocurrent response is 250 times higher than its MPTF counterpart. A few electronic devices have been fabricated using the crystalline wafers. Among them, the Hall test gives low carrier concentration with high mobility. The trap-state density is measured much lower than common semiconductors. Moreover, the large SC-wafer is found particularly useful for mass production of integrated circuits. By adjusting the halide composition, both the optical absorption and the light emission can be fine-tuned across the entire visible spectrum from 400 nm to 800 nm. It is envisioned that a range of visible lasers and LEDs may be developed using the dual-halide perovskites. With fewer trap states, high mobility, broader absorption, and humidity resistance, it is expected that solar cells wi
基金This work was financially supported by the National Key R&D Program of China(No.2022YFB2803900)the National Natural Science Foundation of China(Nos.U2004165,U22A20138,and 11974016)+1 种基金the Natural Science Foundation of Henan Province,China(No.202300410376)Key Research and Development Program(social development)of Jiangsu Province(No.BE2021667).
文摘As one of the most promising materials for two-dimensional transition metal chalcogenides(2D TMDs),molybdenum diselenide(MoSe_(2))has great potential in photodetectors due to its excellent properties like tunable bandgap,high carrier mobility,and excellent air stability.Although 2D MoSe_(2)-based photodetectors have been reported to exhibit admired performance,the large-area 2D MoSe_(2)layers are difficult to be achieved via conventional synthesis methods,which severely impedes its future applications.Here,we present the controllable growth of large-area 2D MoSe_(2)layers over 3.5-inch with excellent homogeneity by a simple post-selenization route.Further,a high-quality n-MoSe_(2)/p-Si van der Waals(vdW)heterojunction device is in-situ fabricated by directly growing 2D n-MoSe_(2)layers on the patterned p-Si substrate,which shows a self-driven broadband photoresponse ranging from ultraviolet to mid-wave infrared with an impressive responsivity of 720.5 mA·W^(−1),a high specific detectivity of 10^(13) Jones,and a fast response time to follow nanosecond pulsed optical signal.In addition,thanks to the inch-level 2D MoSe_(2)layers,a 4×4 integrated heterojunction device array is achieved,which has demonstrated good uniformity and satisfying imaging capability.The large-area 2D MoSe_(2)layer and its heterojunction device array have great promise for high-performance photodetection and imaging applications in integrated optoelectronic systems.
基金supported by Natural Science Basic Research Program of Shaanxi Province of China (No. 2023-JCYB-574)National Natural Science Foundation of China (Grant No. 62304178)。
文摘A 10 × 10 solar-blind ultraviolet(UV) imaging array with double-layer wire structure was prepared based on Ga_(2)O_(3) film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-todark current ratio(PDCR) of 5.5 × 10^(5), responsivity(R) of 4.28 A/W, external quantum efficiency(EQE) of 2.1 × 10^(3)%, detectivity(D*) of 1.5 × 10^(14) Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 ℃, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga_(2)O_(3) solarblind UV detectors.
基金supported by the National Key Research and Development Program of China(Grant No.2022YFB3605404)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.62204125)+2 种基金the Joint Funds of the National Natural Science Foundation of China(Grant No.U23A20349)the Natural Science Research Start-up Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications(Grant Nos.XK1060921115 and XK1060921002)Postgraduate Research&Practice Innovation Program of Jiangsu Province(Grant No.SJCX23_0300)。
文摘In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various applications.This study introduces a sophisticated design for a solar-blind ultraviolet(UV)detector array using linear In-doped Ga_(2)O_(3) (InGaO)modulated by platinum(Pt)nanoparticles(PtNPs).The construction of this array involves depositing a thin film of Ga_(2)O_(3) through the plasmonenhanced chemical vapor deposition(PECVD)technique.Subsequently,PtNPs were synthesized via radio-frequency magnetron sputtering and annealing process.The performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot electrons.This process is facilitated by non-radiative decay processes induced by PtNPs.Notably,the array achieves maximum responsivity(R)of 353 mA/W,external quantum efficiency(EQE)of 173%,detectivity(D*)of approximately 10~(13)Jones,and photoconductive gain of 1.58.In addition,the standard deviation for photocurrent stays below17%for more than 80%of the array units within the array.Subsequently,the application of this array extends to photon detection in the deep-UV(DUV)range.This includes critical areas such as imaging sensing and water quality monitoring.By leveraging surface plasmon coupling,the array achieves high-performance DUV photon detection.This approach enables a broad spectrum of practical applications,underscoring the significant potential of this technology for the advancement of DUV detectors.
基金support by the Key Research Project of Zhejiang Laboratory(N.O.2021PE0AC02)the National Natural Science Foundation of China(N.O.11674210)the Project of Hetao Shenzhen-Hong Kong Science and Technology Innovation Cooperation Zone(HZQB-KCZYB-2020083).
文摘Photodetectors with long detection distances and fast response are important media in constructing a non-contact human-machine interface for the Masterly Internet of Things(MIT).All-inorganic perovskites have excellent optoelectronic performance with high moisture and oxygen resistance,making them one of the promising candidates for high-performance photodetectors,but a simple,low-cost and reliable fabrication technology is urgently needed.Here,a dual-function laser etching method is developed to complete both the lyophilic split-ring structure and electrode patterning.This novel split-ring structure can capture the perovskite precursor droplet efficiently and achieve the uniform and compact deposition of CsPbBr3 films.Furthermore,our devices based on laterally conducting split-ring structured photodetectors possess outstanding performance,including the maximum responsivity of 1.44×105 mA W^(−1),a response time of 150μs in 1.5 kHz and one-unit area<4×10-2 mm2.Based on these split-ring photodetector arrays,we realized three-dimensional gesture detection with up to 100 mm distance detection and up to 600 mm s^(−1) speed detection,for low-cost,integrative,and non-contact human-machine interfaces.Finally,we applied this MIT to wearable and flexible digital gesture recognition watch panel,safe and comfortable central controller integrated on the car screen,and remote control of the robot,demonstrating the broad potential applications.
基金supported by the National Natural Science Foundation of China(Nos.U21A6002 and 51933003)he Basic and Applied Basic Research Major Program of Guangdong Province(No.2019B030302007).
文摘Combining the strategies of introducing larger heteroatom,regio-regular backbone and extended branching position of side-chain,we developed polymer semiconductors(PPCPD)with narrow band-gap to construct the photosensing layer of thin-film photodiodes and image arrays.The spectral response of the resulting organic photodiodes spans from the near ultra-violet to short-wavelength infrared region.The performance of these short-wavelength infrared photodiodes in 900–1200 nm range achieved a level competitive with that of indium gallium arsenide-based inorganic crystalline detectors,exhibiting a specific detectivity of 5.55×1012 Jones at 1.15µm.High photodetectivity and quantum efficiency in photodiode with amorphous/nanocrystalline thin-films of 100–200 nm thickness enabled high pixel-density image arrays without pixel-level-patterning in the sensing layer.1×256 linear diode arrays with 25µm×25µm pixel pitch were achieved,enabling high pixel-density short-wavelength infrared imaging at room temperature.
基金the National Natural Science Foundation of China(Nos.61804136,U1804155,and 62027816).
文摘Ga_(2)O_(3)has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost.Although semiconductor microwires(MWs)possess unique optical and electronic characteristics,the performances of photodetectors developed from Ga_(2)O_(3)MWs are still less than satisfactory.Herein,we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga_(2)O_(3)MWs,possessing a light/dark current ratio of 107 and a responsivity of 2,409 A/W at 40 V.Moreover,a 1×10 solar-blind photodetector linear array is developed based on the Sn-doped Ga_(2)O_(3)MWs via a patternedelectrodes method.And clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solarblind imaging system.The results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga_(2)O_(3)MWs,and thus may push forward their future applications.
基金supported by the National Natural Science Foundation of China(No.52172146)Natural Science Foundation of Jiangsu Province(Nos.BK20190443 and BK20200071)+7 种基金Shuangchuang Talent of Jiangsu Province(No.JSSCRC2021506)Young Elite Scientists Sponsorship Program by Jiangsu CAST(No.JS19TJGC132574)2019 Overseas Students'Science and Technology Innovation Project Selection Funding of Nanjing,Fundamental Research Funds for the Central Universities(Nos.30919011298,30919011299 and 30919012107)National Key R&D Program of China(No.2017YFA0305500)the National Natural Science Foundation of China(Nos.61725402,11604152,and 51672132)the National“ten thousand talents plan”leading talents(No.W03020394)the Six top talent innovation teams of Jiangsu Province(No.TD-XCL-004)Y.D.and Z.H.conducted all the experiments.Y.D.and X.X.wrote the manuscript.Y.Z.and H.Z.supervised this project.
文摘Narrowband photodetectors as specific spectral sensing pixels have drawn intense attention in multispectral detection due to their distinct characteristic of filter-free spectrum discrimination,in which the emerging halide lead perovskites witness a booming development in their performance and wavelength-selectivity from blue to near-infrared light.However,the challenge in integrating perovskite narrowband photodetectors on one chip imposes an impediment on practical application.In this work,the combination of laser-direct-writing and ion exchange is proposed as an efficient way to fabricate high-definition colorful sensing array with perovskite narrowband photodetector unit as pixel.Under laser irradiation,the photolysis of halocarbon solvent(CHCl_(3),CH_(3)CH_(2)I,etc)releases the halide ions,which brings the ion exchange and gives rise to slow-varying bandgap in single perovskite photoactive film.This ion exchange can be controlled via laser irradiation time and focus point,thus enabling precisely engineerable bandgap.By optimizing the process,it is successfully applied to develop patterned perovskite narrow blue and green photodetectors array with a high-definition of~53 ppi.We believe this result will make a great step forward to integrate multifunctional perovskite devices on one chip,which will pave the way for perovskite optoelectronic device to the commercial application.
基金supported by the National Key R&D Program of China(Grant No.2022YFB3605404)the National Natural Science Foundation of China(Grant No.62204125)+2 种基金the Open Fund of Key Laboratory of Aerospace Information Materials and Physics(NUAA)MIITthe Natural Science Research Start-up Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications(Grant Nos.XK1060921115XK1060921002)。
文摘In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing application.The 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor deposition technique;and the photodetector array was fabricated through ultraviolet photolithography,lift-off,and electron-beam evaporation.In addition to the high solar-blind/visible rejection ratio of 104,every photodetector cell in the array has high performance and fast response speed,such as responsivity of 49.4 A W^(-1),specific detectivity of 6.8×10^(14)Jones,external quantum efficiency of 1.9×10^(4)%,linear dynamic range of 117.8 d B,and response time of 41 ms,respectively,indicating the high photo-response performance of the photodetector.Moreover,the photodetector array displayed uniform responsivity with a standard deviation of~6%,and presented a sensing image of low chromatic aberration,owing to the high resolution of the photodetector array.In a word,this work may contribute to developing Ga_(2)O_(3)-based optoelectronic device applications.
基金supported by the National Natural Science Foundation of China (Nos. 61574161 and 61574130)the Natural Science Foundation of Jiangsu Province,China (No. BK20180252)the Department of Science and Technology of Jilin Province,China(No. 20180520177JH)。
文摘A monolithic integrated ultraviolet-infrared(UV-IR) dual-color photodetector based on graphene/GaN heterojunction was fabricated by vertically integrating a GaN nanowire array on a silicon substrate with monolayer graphene. The device detects UV and IR lights by different mechanisms. The UV detection is accomplished by the forbidden band absorption of GaN, and the IR detection is realized by the free electron absorption of graphene. At peak wavelengths of 360 nm and 1540 nm, the detector has responsivities up to 6.93 A/W and 0.11 A/W, detection efficiencies of 1.23 × 1012 cm·Hz1/2·W-1 and 1.88 × 1010 cm·Hz1/2·W-1, respectively,and a short response time of less than 3 ms.
基金Project supported by the National High Technology Research and Development Program of China(Grant Nos.2013AA031401,2015AA016902,and 2015AA016904)the National Natural Science Foundation of China(Grant Nos.61176053,61274069,and 61435002)the National Basic Research Program of China(Grant Nos.2012CB933503 and 2013CB932904)
文摘We have provided optical simulations of the evanescently coupled waveguide photodiodes integrated with a 13- channels AWGs. The photodiode could exhibit high internal efficiency by appropriate choice of layers geometry and refrac- tive index. Aseamless joint structure has been designed and fabricated for integrating the output waveguides of AWGs with the evanescently coupled waveguide photodiode array. The highest simulation quantum efficiency could achieve 92% when the matching layer thickfiess of the PD is 120 nm and the insertion length is 2 μm. The fabricated PD with 320-nm-thick match.ing layer and 2-μm-length insertion matching layer present a responsivity of 0.87 A/W.
基金Project Supported by National High Technology Research and Development( 863 ) Program of China and by National Science
文摘The investigation on G)s/AlG)s multiple quantum well Self Electro-optic Effec t Device (SEED) arrays for flip\|chip bonding optoelectronic smart pixels has be en reported. In order to increase the absorption of the intrinsic region, the number of quantum well periods is defined as 90 pairs. The G)s/AlG)s multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic chara cteristics of elements in SEED arrays.
基金supported by the Ministry of Science and Technology of China(2016YFA0200103)the National Natural Science Foundation of China(51672153,21975141)the National Program for Support of Top-notch Young Professionals.
文摘Hybrid perovskite possesses excellent photoelectric properties,including large light-absorption capacity and high carrier mobility,and is an ideal light-absorbing material for photoelectric devices.The grain size and compactness of hybrid perovskite are key factors affecting the performance of photoelectric devices.The photocurrent and photoresponsivity of these devices are relatively low because of the rapidly recombined photoexcited electron-hole pairs in hybrid perovskite.Herein,we develop a facile two-step chemical vapor deposition(CVD)method to synthesize a high-quality van der Waals(vd Ws)MAPb I3/graphene heterostructure for high-performance image sensor.We introduced inorganic sources(PbI2)to vd Ws epitaxially grown Pb I2 film on a seamless graphene monolayer film template through CVD.Methylammonium iodide(MAI)was then reintroduced to prepare the vd Ws MAPb I3/graphene heterostructure.The MAPb I3 layer is composed of densely packed,large-size grains and displays a smooth surface.High photoresponsivity of 107A/W is achieved in the corresponding photodetector.Inspired by the human visual system,we designed a flexible photodetector array containing(24?24)pixels,achieving perfect image recognition and color discrimination.Our study may greatly facilitate the construction of high-performance optoelectronic devices in artificial retina,biomedical imaging,remote sensing,and optical communication.
