摘要
Combining the strategies of introducing larger heteroatom,regio-regular backbone and extended branching position of side-chain,we developed polymer semiconductors(PPCPD)with narrow band-gap to construct the photosensing layer of thin-film photodiodes and image arrays.The spectral response of the resulting organic photodiodes spans from the near ultra-violet to short-wavelength infrared region.The performance of these short-wavelength infrared photodiodes in 900–1200 nm range achieved a level competitive with that of indium gallium arsenide-based inorganic crystalline detectors,exhibiting a specific detectivity of 5.55×1012 Jones at 1.15µm.High photodetectivity and quantum efficiency in photodiode with amorphous/nanocrystalline thin-films of 100–200 nm thickness enabled high pixel-density image arrays without pixel-level-patterning in the sensing layer.1×256 linear diode arrays with 25µm×25µm pixel pitch were achieved,enabling high pixel-density short-wavelength infrared imaging at room temperature.
基金
supported by the National Natural Science Foundation of China(Nos.U21A6002 and 51933003)
he Basic and Applied Basic Research Major Program of Guangdong Province(No.2019B030302007).
