利用直流磁控溅射在石英衬底上沉积透明导电的掺锡氧化铟(ITO)薄膜,在相同条件下制备了两种不同溅射时间(30、10 m in)的样品,样品在400℃的大气中进行1 h退火处理.利用分光光度计测量薄膜的正入射透射光谱,并拟合透射光谱得到薄膜的折...利用直流磁控溅射在石英衬底上沉积透明导电的掺锡氧化铟(ITO)薄膜,在相同条件下制备了两种不同溅射时间(30、10 m in)的样品,样品在400℃的大气中进行1 h退火处理.利用分光光度计测量薄膜的正入射透射光谱,并拟合透射光谱得到薄膜的折射率、消光系数及厚度;用V an der Pauw方法测量薄膜电学性质,包括载流子浓度、载流子迁移率和电阻率.实验结果显示退火处理对ITO薄膜的光学、电学性质有重要影响,退火样品在可见光区域的透过率明显提高,且光学吸收边向长波方向移动;然而,退火前薄膜的电学性能更好.展开更多
β-GaOis an ultra-wide band-gap semiconductor with promising applications in UV optical detectors,Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of...β-GaOis an ultra-wide band-gap semiconductor with promising applications in UV optical detectors,Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-GaOcrystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-GaOsingle crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-GaOcrystals were investigated systematically.展开更多
Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The stru...Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400℃, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.展开更多
文摘利用直流磁控溅射在石英衬底上沉积透明导电的掺锡氧化铟(ITO)薄膜,在相同条件下制备了两种不同溅射时间(30、10 m in)的样品,样品在400℃的大气中进行1 h退火处理.利用分光光度计测量薄膜的正入射透射光谱,并拟合透射光谱得到薄膜的折射率、消光系数及厚度;用V an der Pauw方法测量薄膜电学性质,包括载流子浓度、载流子迁移率和电阻率.实验结果显示退火处理对ITO薄膜的光学、电学性质有重要影响,退火样品在可见光区域的透过率明显提高,且光学吸收边向长波方向移动;然而,退火前薄膜的电学性能更好.
文摘β-GaOis an ultra-wide band-gap semiconductor with promising applications in UV optical detectors,Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-GaOcrystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-GaOsingle crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-GaOcrystals were investigated systematically.
基金the Program for New Century Excellent Talents in Universities, MOE, China (No. NCET-05-0764)the Tackle Key Problems on Scientific Technology Foundation of Chongqing Municipality (Nos. CSTC2005AA4006-A6 and CSTC2004AC4034)+2 种基金the Natural Science Foundation of Chongqing Municipality (No. CSTC2005BA4016)China Postdoctoral Science Foundation (No. 2005037544)the Inno-base for Graduates of Chongqing University (No. 200506Y1B0240131).
文摘Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400℃, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.
