Total ionizing dose effects of Si^＋ ion implanted thermal oxides are studied by 10keV x-ray irradiation. Photoluminescence （PL） method is engaged to investigate nanostructures of samples. Ar^＋ implanted samples ar...Total ionizing dose effects of Si^＋ ion implanted thermal oxides are studied by 10keV x-ray irradiation. Photoluminescence （PL） method is engaged to investigate nanostructures of samples. Ar^＋ implanted samples are also studied by the same way to provide a comparison. The results show that Si^＋ implantation following with high temperature annealing can significantly reduce the radiation induced flatband shift, which is caused by net posi- tive charge accumulation in oxides. This reduction is attributed to the formation of Si nanoscale structures. Ar^＋ implantation is also found to reduce the radiation induced flatband shift, while it is different that the reduction with Si^＋ implantation shows little dependence on implant dose of Ar^＋ ions. This is explained by possible increase of recombination centres.展开更多
This paper presents the total dose radiation performance of 0.8μm SOI CMOS devices fabricated with full dose SIMOX technology. The radiation performance is characterized by threshold voltage shifts and leakage curren...This paper presents the total dose radiation performance of 0.8μm SOI CMOS devices fabricated with full dose SIMOX technology. The radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of ASIC as functions of the total dose up to 500krad（Si）. The experimental results show that the worst case threshold voltage shifts of front channels are less than 320mV for pMOS transistors under off-gate radiation bias at 1Mrad（Si） and less than 120mV for nMOS transistors under on-gate radiation bias. No significant radiation-induced leakage current is observed in transistors to 1Mrad （Si）. The standby currents of ASIC are less than the specification of 5μA over the total dose range of 500krad（Si）.展开更多
In order to improve the total-dose radiation har dness of the buried oxides(BOX) in the structure of separation-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI),nitrogen ions are implanted into the buried oxides w...In order to improve the total-dose radiation har dness of the buried oxides(BOX) in the structure of separation-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI),nitrogen ions are implanted into the buried oxides with two different doses,2×10 15 and 3×10 15 cm -2 ,respectively.The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source.Despite the small difference between the doses of nitrogen implantation,the nitrogen-implanted 2×10 15 cm -2 BOX has a much higher hardness than the control sample (i.e.the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5×104rad(Si),whereas the nitrogen-implanted 3×10 15 cm -2 BOX has a lower hardness than uhe control sample.However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5×104 to 5×105rad (Si)).The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed.In addition,the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.展开更多
文摘Total ionizing dose effects of Si^＋ ion implanted thermal oxides are studied by 10keV x-ray irradiation. Photoluminescence （PL） method is engaged to investigate nanostructures of samples. Ar^＋ implanted samples are also studied by the same way to provide a comparison. The results show that Si^＋ implantation following with high temperature annealing can significantly reduce the radiation induced flatband shift, which is caused by net posi- tive charge accumulation in oxides. This reduction is attributed to the formation of Si nanoscale structures. Ar^＋ implantation is also found to reduce the radiation induced flatband shift, while it is different that the reduction with Si^＋ implantation shows little dependence on implant dose of Ar^＋ ions. This is explained by possible increase of recombination centres.
文摘This paper presents the total dose radiation performance of 0.8μm SOI CMOS devices fabricated with full dose SIMOX technology. The radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of ASIC as functions of the total dose up to 500krad（Si）. The experimental results show that the worst case threshold voltage shifts of front channels are less than 320mV for pMOS transistors under off-gate radiation bias at 1Mrad（Si） and less than 120mV for nMOS transistors under on-gate radiation bias. No significant radiation-induced leakage current is observed in transistors to 1Mrad （Si）. The standby currents of ASIC are less than the specification of 5μA over the total dose range of 500krad（Si）.
文摘In order to improve the total-dose radiation har dness of the buried oxides(BOX) in the structure of separation-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI),nitrogen ions are implanted into the buried oxides with two different doses,2×10 15 and 3×10 15 cm -2 ,respectively.The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source.Despite the small difference between the doses of nitrogen implantation,the nitrogen-implanted 2×10 15 cm -2 BOX has a much higher hardness than the control sample (i.e.the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5×104rad(Si),whereas the nitrogen-implanted 3×10 15 cm -2 BOX has a lower hardness than uhe control sample.However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5×104 to 5×105rad (Si)).The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed.In addition,the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.
