The single-layer black phosphorus is characterized by its puckered configuration that pos- sesses the hinge-like behavior, which leads to the highly anisotropic in-plane Poisson＇s ratios and the negative out-of-plane...The single-layer black phosphorus is characterized by its puckered configuration that pos- sesses the hinge-like behavior, which leads to the highly anisotropic in-plane Poisson＇s ratios and the negative out-of-plane Poisson＇s ratio. We demonstrate that the hinge-like mechanism can be described by the angle-angle cross interaction, which, combined with the bond stretching and angle bending interactions, is able to provide a good description for the mechanical properties of single-layer black phosphorus. We also propose a nonlinear angle-angle cross interaction, which follows the form of Stillinger-Weber potential and can be advantageous for molecular dynamics simulations of single-layer black phosphorus under large deformation.展开更多
Phosphorene has a very high hole mobility and can be a tuned band structure,and has become an ideal material for electronic devices.For this new type of two-dimensional material,in the applied strain,black phosphorus...Phosphorene has a very high hole mobility and can be a tuned band structure,and has become an ideal material for electronic devices.For this new type of two-dimensional material,in the applied strain,black phosphorus（BP） can be changed into an indirect band gap and metallic materials from the direct band gap semiconductor material,which greatly affect its inherent physical characteristics.How to identify strained micro structure changes becomes an important problem.The calculated Raman spectra disclose that the Ag-2 mode and B（2g） mode will split and the Raman spectra appear,while the Ag-1 mode is shifted to low-frequency region.The deformation induced by strain will effectively change the Raman mode position and intensity,this can be used to identify phosphorus changes.展开更多
Recently, black phosphorus （BP） has joined the two-dimensional material family as a promising candidate for elec- tronic and photonic applications due to its moderate bandgap, high carrier mobility, and unusual in-p...Recently, black phosphorus （BP） has joined the two-dimensional material family as a promising candidate for elec- tronic and photonic applications due to its moderate bandgap, high carrier mobility, and unusual in-plane anisotropy. Here, we review recent progress in BP-based devices, such as field-effect transistors, contact resistance, quantum transport, stabil- ity, photodetector, heterostructure, and in-plane anisotropy. We also give our perspectives on future BP research directions.展开更多
We demonstrate theoretically the anisotropic quantum transport of electrons through a single barrier on monolayer phosphorene. Using an effective k .p Hamiltonian, we find that the transmission probability for transpo...We demonstrate theoretically the anisotropic quantum transport of electrons through a single barrier on monolayer phosphorene. Using an effective k .p Hamiltonian, we find that the transmission probability for transport through n-n-n （or n p-n） junction is an oscillating function of the incident angle, the barrier height, as well as the incident energy of electrons. The conductance in such systems depends sensitively on the transport direction due to the anisotropic effective mass. By tuning the Fermi energy and gate voltage, the channels can be transited from opaque to transparent, which provides us with an efficient way to control the transport of monolayer phosphorene-based microstructures.展开更多
基金supported by the Recruitment Program of Global Youth Experts of Chinathe National Natural Science Foundation of China (NNSFC) under grant no. 11504225the startup funding from Shanghai University
文摘The single-layer black phosphorus is characterized by its puckered configuration that pos- sesses the hinge-like behavior, which leads to the highly anisotropic in-plane Poisson＇s ratios and the negative out-of-plane Poisson＇s ratio. We demonstrate that the hinge-like mechanism can be described by the angle-angle cross interaction, which, combined with the bond stretching and angle bending interactions, is able to provide a good description for the mechanical properties of single-layer black phosphorus. We also propose a nonlinear angle-angle cross interaction, which follows the form of Stillinger-Weber potential and can be advantageous for molecular dynamics simulations of single-layer black phosphorus under large deformation.
基金Project supported by the National Science Foundation of China(Nos.61505085,61574080,61274127)the Innovation Project of Jiangsu Graduate Student,China(No.SJLX15_0379)
文摘Phosphorene has a very high hole mobility and can be a tuned band structure,and has become an ideal material for electronic devices.For this new type of two-dimensional material,in the applied strain,black phosphorus（BP） can be changed into an indirect band gap and metallic materials from the direct band gap semiconductor material,which greatly affect its inherent physical characteristics.How to identify strained micro structure changes becomes an important problem.The calculated Raman spectra disclose that the Ag-2 mode and B（2g） mode will split and the Raman spectra appear,while the Ag-1 mode is shifted to low-frequency region.The deformation induced by strain will effectively change the Raman mode position and intensity,this can be used to identify phosphorus changes.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11404118,61574066,and 61390504)
文摘Recently, black phosphorus （BP） has joined the two-dimensional material family as a promising candidate for elec- tronic and photonic applications due to its moderate bandgap, high carrier mobility, and unusual in-plane anisotropy. Here, we review recent progress in BP-based devices, such as field-effect transistors, contact resistance, quantum transport, stabil- ity, photodetector, heterostructure, and in-plane anisotropy. We also give our perspectives on future BP research directions.
基金Supported by the National Natural Science Foundation of China under Grant No 11374002the Hunan Provincial Natural Science Foundation of China under Grant No 13JJ2026+2 种基金the Scientific Research Fund of Hunan Provincial Education Department under Grant No 12B010the Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Provincethe Construct Program of the Key Discipline in Hunan Province
文摘We demonstrate theoretically the anisotropic quantum transport of electrons through a single barrier on monolayer phosphorene. Using an effective k .p Hamiltonian, we find that the transmission probability for transport through n-n-n （or n p-n） junction is an oscillating function of the incident angle, the barrier height, as well as the incident energy of electrons. The conductance in such systems depends sensitively on the transport direction due to the anisotropic effective mass. By tuning the Fermi energy and gate voltage, the channels can be transited from opaque to transparent, which provides us with an efficient way to control the transport of monolayer phosphorene-based microstructures.
