摘要
磷有多种同素异构体:红磷、白磷、黑磷,其中黑磷热力学稳定.二维材料因其低维效应而备受关注,而近期二维黑磷的成功制备使其成为二维材料的新成员.二维黑磷是带隙可调的片层结构半导体材料,在光电领域有很大的潜力,因而备受瞩目.本文大量引用参考文献,综述了黑磷的结构、制备方法,并详细介绍了二维黑磷的各种性质及其器件性能的研究,以及化学稳定性及防降解措施.最后分析了二维黑磷的研究发展趋势.
Two-dimensional （2D） materials have attracted broad interest because of their low-dimensional effect, and black phosphorus has become a member of them due to the successful preparation. Phosphorus has several allotropes, white phosphorus, red phosphorus and black phosphorus. Black phosphorus is most thermodynamic stable in them. Black phosphorus was obtained by a phase transition from white or red phosphorus at high pressure and high temperature. It is a natural p-type semiconductor in which each layer is vertically stacked by the van der Waals force. The thickness of black phosphorus can be scaled down to the atomic layer scale known as phosphorene by mechanical exfoliation or liquid exfoliation. In nowadays, pulsed laser deposition （PLD） has also been used in synthesis of phosphorene film. Compared with black phosphorus, phosphorene＇s physical properties have significant changes. The band gap in bulk black phosphorus is 0.3 eV and can be expanded to 1.0 to 1.5 eV depending on the layer numbers. The range of phosphorene band gap corresponds to an absorption spectrum between visible light to infrared. Moreover, the band gap of phosphorene is also highly sensitive to the strain either in-plane or out-of-plane. The phosphorene based field effect transistor frET） exhibits a high mobility and appreciably high on/off ratios, and the mobility is thickness dependent. Unlike other two-dimensional （2D） materials, phosphorene has in-plane anisotropy which is suitable for the detecting of polarized light. Hence, the unique properties in black phosphorus, along with its high carder mobility, make it as a promising material in electronic applications. Nevertheless, the poor chemical and structural stability of black phosphorus and phosphorene raises important concerns. In the past century, the synthesis, physical properties, and device applications have been extensively investigated in various studies. In this review article, a lot of references of black phosphorus are cited to introduce systematically the res
出处
《化学学报》
SCIE
CAS
CSCD
北大核心
2016年第6期488-497,共10页
Acta Chimica Sinica
基金
国家自然科学基金(NSFC)(Nos.51302081
61575010)
北京市科技新星(No.Z141109001814053)
北京市科委先导与优势材料创新项目(No.Z151100003315018)
中科院半导体材料科学重点实验室开放课题(No.KLSMS-1404)
中央基本科研项目(No.222015Y-4006)资助~~
关键词
二维半导体材料
黑磷
制备
性质
器件性能
2D semiconducting materials
black phosphorus
preparation
material properties
nano device performance
