本研究利用一步化学气相沉积技术制备了Sn_(x)Mo_(1−x)S_(2)/MoS_(2)横向异质结高性能二极管.通过选择性掺杂Sn原子到单层MoS_(2)的边缘,形成了与MoS_(2)相同晶格常数的Sn_(x)Mo_(1−x)S_(2).在边缘的Sn_(x)Mo_(1−x)S_(2)和内部的MoS_(2...本研究利用一步化学气相沉积技术制备了Sn_(x)Mo_(1−x)S_(2)/MoS_(2)横向异质结高性能二极管.通过选择性掺杂Sn原子到单层MoS_(2)的边缘,形成了与MoS_(2)相同晶格常数的Sn_(x)Mo_(1−x)S_(2).在边缘的Sn_(x)Mo_(1−x)S_(2)和内部的MoS_(2)上分别沉积铬/金电极,形成肖特基势垒,其中势垒高度不同导致载流子仅在一个方向上传输.通过控制掺杂浓度和栅极电压,可实现MoS_(2)和Sn_(x)Mo_(1−x)S_(2)之间费米能级的对齐调节,实现了可调整的整流比,最高达到104.令人印象深刻的是,该二极管还表现出优异的光伏特性,该器件在λ=400 nm处实现了40%的外量子效率值.此外,我们在无外部偏压条件下实现了自供电光电探测,该异质结二极管在400和650 nm波长处的响应率分别为0.12和0.16 A W^(-1).对应的探测率分别是4.9×10^(10)和6.4×10^(10)Jones.可调的掺杂浓度为进一步创造高效器件提供了可能.这种合成二维侧向二极管的策略丰富了异质结二极管的材料多样性,并为开发新型电子和光电器件提供了新的平台.展开更多
The electron injection and acceleration driven by a few-cycle laser with a sharp vacuum-plasma boundary have been investigated through three-dimensional(3D)particle-in-cell simulations.It is found that an isotropic bo...The electron injection and acceleration driven by a few-cycle laser with a sharp vacuum-plasma boundary have been investigated through three-dimensional(3D)particle-in-cell simulations.It is found that an isotropic boundary impact injection(BII)first occurs at the vacuum-plasma boundary,and then carrier-envelope-phase(CEP)shift causes the transverse oscillation of the plasma bubble,resulting in a periodic electron self-injection(SI)in the laser polarization direction.It shows that the electron charge of the BII only accounts for a small part of the total charge,and the CEP can effectively tune the quality of the injected electron beam.The dependences of laser intensity and electron density on the total charge and the ratio of BII charge to the total charge are studied.The results are beneficial to electron acceleration and its applications,such as betatron radiation source.展开更多
基金supported by the National Key R&D Program of China(2022YFA1505200,2018YFA0306900)the National Natural Science Foundation of China(21872114,92163103)the Fundamental Research Funds for the Central Universities(20720210009)。
文摘本研究利用一步化学气相沉积技术制备了Sn_(x)Mo_(1−x)S_(2)/MoS_(2)横向异质结高性能二极管.通过选择性掺杂Sn原子到单层MoS_(2)的边缘,形成了与MoS_(2)相同晶格常数的Sn_(x)Mo_(1−x)S_(2).在边缘的Sn_(x)Mo_(1−x)S_(2)和内部的MoS_(2)上分别沉积铬/金电极,形成肖特基势垒,其中势垒高度不同导致载流子仅在一个方向上传输.通过控制掺杂浓度和栅极电压,可实现MoS_(2)和Sn_(x)Mo_(1−x)S_(2)之间费米能级的对齐调节,实现了可调整的整流比,最高达到104.令人印象深刻的是,该二极管还表现出优异的光伏特性,该器件在λ=400 nm处实现了40%的外量子效率值.此外,我们在无外部偏压条件下实现了自供电光电探测,该异质结二极管在400和650 nm波长处的响应率分别为0.12和0.16 A W^(-1).对应的探测率分别是4.9×10^(10)和6.4×10^(10)Jones.可调的掺杂浓度为进一步创造高效器件提供了可能.这种合成二维侧向二极管的策略丰富了异质结二极管的材料多样性,并为开发新型电子和光电器件提供了新的平台.
基金the National Natural Science Foundation of China(Grant Nos.12005297,12175309,12175310,11975308,and 12275356)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDA25050200)+3 种基金the Research Project of NUDT(Grant No.ZK21-12)the Key Laboratory Foundation of Laser Plasma of Ministry of Educationthe financial support from the NUDT Young Innovator Awards(Grant No.20190102)Outstanding Young Talents。
文摘The electron injection and acceleration driven by a few-cycle laser with a sharp vacuum-plasma boundary have been investigated through three-dimensional(3D)particle-in-cell simulations.It is found that an isotropic boundary impact injection(BII)first occurs at the vacuum-plasma boundary,and then carrier-envelope-phase(CEP)shift causes the transverse oscillation of the plasma bubble,resulting in a periodic electron self-injection(SI)in the laser polarization direction.It shows that the electron charge of the BII only accounts for a small part of the total charge,and the CEP can effectively tune the quality of the injected electron beam.The dependences of laser intensity and electron density on the total charge and the ratio of BII charge to the total charge are studied.The results are beneficial to electron acceleration and its applications,such as betatron radiation source.
