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Reactive Magnetron Sputtering of CN_x Thin Films on β-Si_3N_4 Substrates 被引量:1
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作者 WT.Zheng N-Hellgren and j.-e.sundgren( Dept. of Materials Science, jilin Univer-sity Changchun 13oo23, China)(Dept. of Physics, Linkoping University, S-581 83 Linkoping, Sweden) 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 1998年第3期269-272,共4页
Carbon nitride CN. thin films have been deposited on polycrystalline β-Si3N4 substrates by un-balanced magnetron sputtering in a nitrogen discharge. Both the film deposition rate and the nitrogen concentration decrea... Carbon nitride CN. thin films have been deposited on polycrystalline β-Si3N4 substrates by un-balanced magnetron sputtering in a nitrogen discharge. Both the film deposition rate and the nitrogen concentration decrease with substrate temperature increase in the range of 100~400℃The maximum of nitrogen content is 40 at. pct. Raman spectroscopy and atomic force mi-croscopy were used to characterize the bonding, microstructure and surface roughness of the films. Nanoindentation experiments exhibit a higher hardness of 70 GPa and an extremely elas-tic recovery of 85% at higher substrate temperature. 展开更多
关键词 Thin Si3N4 Substrates Reactive Magnetron Sputtering of CN_x Thin Films on CN
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磁控溅射CN_x薄膜的结构与硬度关系研究 被引量:3
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作者 郑伟涛 李海波 +1 位作者 王煜明 j.e.sundgren 《科学通报》 EI CAS CSCD 北大核心 1999年第8期822-824,共3页
对磁控溅射生长在单晶Si( 0 0 1 )衬底上的CNx 薄膜样品的化学结合状态和结构进行了研究 .Fourier变换红外光谱 (FTIR)显示CNx 薄膜中的N原子与处于sp1,sp2 ,sp3 杂化状态的C原子相结合 .近边缘X光吸收精细结构 (NEXAFS)显示 ,π 共振... 对磁控溅射生长在单晶Si( 0 0 1 )衬底上的CNx 薄膜样品的化学结合状态和结构进行了研究 .Fourier变换红外光谱 (FTIR)显示CNx 薄膜中的N原子与处于sp1,sp2 ,sp3 杂化状态的C原子相结合 .近边缘X光吸收精细结构 (NEXAFS)显示 ,π 共振与薄膜生长温度 (Ts)有关 ,在T =35 0℃时π 共振的强度值为最低 .利用高分辨电子显微镜 (HREM)观察到CNx 薄膜具有两种显微结构、在生长温度小于 2 0 0℃时为非晶结构 ,薄膜的硬度较低 .而在生长温度大于2 0 0℃时为类turbostratic结构 ,此时薄膜的硬度较高 .最后对CNx 薄膜结构和硬度的关系进行了讨论 . 展开更多
关键词 硬度 显微结构 磁控溅射 薄膜 氮化碳
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Characterization of Magnetron Sputter CN_(x) Thin Films
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作者 ZHeNG Wei-tao j.e.sundgren 《Chinese Physics Letters》 SCIE CAS CSCD 1998年第2期120-122,共3页
Carbon nitride thin films were deposited at different substrate temperature(ST)by using reactive magnetron sputtering in a pure N_(2) discharge,and studied by laser Raman spectroscopy,x-ray photoelectron spectroscopy(... Carbon nitride thin films were deposited at different substrate temperature(ST)by using reactive magnetron sputtering in a pure N_(2) discharge,and studied by laser Raman spectroscopy,x-ray photoelectron spectroscopy(XPS),and spectroscopic ellipsometer.The Raman spectra of the films show that I(D)/I(G)decreased with the increase of ST.The D bandposition shifted towards lower frequency,while the G bandposition shifted towards higher frequency as the ST increased.The XPS data exhibit that Nls binding states also depend on ST.The optical band gap of the films is found dropped from 0.22eV to 0.10eV with the increase of ST. 展开更多
关键词 shifted FILMS SPECTROSCOPIC
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