Biological materials of garlic, Wulong-tea and human hair were investigated by 14.2 MeV proton activation analysis using internal standard method. Elemental concentrations of Ca, Ti, V, Cr, Fe, Ni, Cu, Zn, Ge, Se, Sr,...Biological materials of garlic, Wulong-tea and human hair were investigated by 14.2 MeV proton activation analysis using internal standard method. Elemental concentrations of Ca, Ti, V, Cr, Fe, Ni, Cu, Zn, Ge, Se, Sr, Cd, La and Pb in biological samples were determined under the 5×10-8-2×10-5g/g of展开更多
Polyacetylene films were doped with FeCl3 and implanted with 30 k’eV K+ ions. Physical changes to the films were examined by a series of measurements, which include the four-probe test, infrared ray absorption and 2 ...Polyacetylene films were doped with FeCl3 and implanted with 30 k’eV K+ ions. Physical changes to the films were examined by a series of measurements, which include the four-probe test, infrared ray absorption and 2 MeV He+ particle elastic recoil dettection and Rutherford backscattering. The chemical dopants (Fe+++ and Cl-) were redistributed after the implantation and the different species (K+. Fe+++ and Cl-ions) formed p - n junctions at the implantation depths. The implanted films exhibited desirable Ⅰ-Ⅴ characteristics, with current densities as high as 600 mA/cm- at 3V and back - to - forward ratio of current over 300. The polymer diodes kept their behavior for over 60 days. Discussions on the results were given in detail.展开更多
The effects of ion implantation on ployacetylene films PA have been studied with Ar^+, Fe^+, C1^+, I^+, Na^+ and K^+ ions in the energy range of 15—30 keV. The changes of PA films in the electrical conductivity, due ...The effects of ion implantation on ployacetylene films PA have been studied with Ar^+, Fe^+, C1^+, I^+, Na^+ and K^+ ions in the energy range of 15—30 keV. The changes of PA films in the electrical conductivity, due to chemical doping and ion implantation in relation to their structure and depth profiles of impurities, were measured through infrared (ATR/FTIK), Rutherford backscattering spectrometry (RBS) and the four probe technique. In all cases, ion implantation of active ions exhibits the same effects as chemical doping. The formation of p-n junction is observed at the interface of implanted region and chemical doped PA substrate. The mechanism of interaction process between ion beam and polymer is also discussed.展开更多
基金The Project Supported by National Natural Science Foundation of China
文摘Biological materials of garlic, Wulong-tea and human hair were investigated by 14.2 MeV proton activation analysis using internal standard method. Elemental concentrations of Ca, Ti, V, Cr, Fe, Ni, Cu, Zn, Ge, Se, Sr, Cd, La and Pb in biological samples were determined under the 5×10-8-2×10-5g/g of
基金The Project Supported by National Natural Science Foundation of China, Contract No.1860193
文摘Polyacetylene films were doped with FeCl3 and implanted with 30 k’eV K+ ions. Physical changes to the films were examined by a series of measurements, which include the four-probe test, infrared ray absorption and 2 MeV He+ particle elastic recoil dettection and Rutherford backscattering. The chemical dopants (Fe+++ and Cl-) were redistributed after the implantation and the different species (K+. Fe+++ and Cl-ions) formed p - n junctions at the implantation depths. The implanted films exhibited desirable Ⅰ-Ⅴ characteristics, with current densities as high as 600 mA/cm- at 3V and back - to - forward ratio of current over 300. The polymer diodes kept their behavior for over 60 days. Discussions on the results were given in detail.
基金Project supported by the National Natural Science Foundation of China
文摘The effects of ion implantation on ployacetylene films PA have been studied with Ar^+, Fe^+, C1^+, I^+, Na^+ and K^+ ions in the energy range of 15—30 keV. The changes of PA films in the electrical conductivity, due to chemical doping and ion implantation in relation to their structure and depth profiles of impurities, were measured through infrared (ATR/FTIK), Rutherford backscattering spectrometry (RBS) and the four probe technique. In all cases, ion implantation of active ions exhibits the same effects as chemical doping. The formation of p-n junction is observed at the interface of implanted region and chemical doped PA substrate. The mechanism of interaction process between ion beam and polymer is also discussed.
