This work is an improvement of the theory proposed by Qin Guogang and C. T. Sah for determination of deep level profiles in the multi-level ease. The previous theory cannot be applied to the ease when a level whose de...This work is an improvement of the theory proposed by Qin Guogang and C. T. Sah for determination of deep level profiles in the multi-level ease. The previous theory cannot be applied to the ease when a level whose density is comparable to the carrier density exists between the Fermi level and the deep level under study or when the deep level under study locates near the middle of the forbidden gap. The present work has overcome those restrictions so that it is applicable to more general cases. For the proton-implanted CZ-Si sample, the density profile of E(0.22), second acceptor level of divacancies, has been calculated in the presence of highly concentrated oxygen-vacancy level E(0.15) and has been compared with the profile of the same level E(0.22) calculated without considering the existence of E(0.15).展开更多
A computer program MACA was developed for simulating high-dose ion implantation into amorphous solids. The topology of amorphous solids was modelled by adjusting the free flight path distribution between collisions, s...A computer program MACA was developed for simulating high-dose ion implantation into amorphous solids. The topology of amorphous solids was modelled by adjusting the free flight path distribution between collisions, so that the radial distribution function will characterize the short - range order and long - range disorder of amorphous targets. A simulation example is given.展开更多
基金The project supported by the National Natural Science Foundation of China.
文摘This work is an improvement of the theory proposed by Qin Guogang and C. T. Sah for determination of deep level profiles in the multi-level ease. The previous theory cannot be applied to the ease when a level whose density is comparable to the carrier density exists between the Fermi level and the deep level under study or when the deep level under study locates near the middle of the forbidden gap. The present work has overcome those restrictions so that it is applicable to more general cases. For the proton-implanted CZ-Si sample, the density profile of E(0.22), second acceptor level of divacancies, has been calculated in the presence of highly concentrated oxygen-vacancy level E(0.15) and has been compared with the profile of the same level E(0.22) calculated without considering the existence of E(0.15).
文摘A computer program MACA was developed for simulating high-dose ion implantation into amorphous solids. The topology of amorphous solids was modelled by adjusting the free flight path distribution between collisions, so that the radial distribution function will characterize the short - range order and long - range disorder of amorphous targets. A simulation example is given.
