During the preparation of the phase change memory,the deposition and chemical mechanical polishing(CMP)of titanium nitride(TiN)are indispensable.A new acidic slurry added with sodium hypochlorite(NaClO)as an oxidizer ...During the preparation of the phase change memory,the deposition and chemical mechanical polishing(CMP)of titanium nitride(TiN)are indispensable.A new acidic slurry added with sodium hypochlorite(NaClO)as an oxidizer is developed for the CMP of TiN film.It has achieved a material removal rate of 76 nm/min,a high selectivity between TiN film and silica(SiO_(2))films of 128:1,a selectivity between TiN film and tungsten film of 84:1 and a high surface quality.To understand the mechanism of TiN CMP process,x-ray photoelectron(XPS)spectroscope and potentiodynamic polarization measurement are performed.It is found that the mechanism of TiN CMP process is cyclic reaction polishing mechanism.In addition,both static corrosion rate and the inductively coupled plasma results indicate TiN would not be dissolved,which means that the mechanical removal process of oxide layer plays a decisive role in the material removal rate.Finally,the mechanism of TiN polishing process is given based on the analysis of surface potential and the description of blocking function.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874178 and 61874129)the National Key Research and Development Program of China(Grant Nos.2018YFB0407500 and 2017YFA0206101)。
文摘During the preparation of the phase change memory,the deposition and chemical mechanical polishing(CMP)of titanium nitride(TiN)are indispensable.A new acidic slurry added with sodium hypochlorite(NaClO)as an oxidizer is developed for the CMP of TiN film.It has achieved a material removal rate of 76 nm/min,a high selectivity between TiN film and silica(SiO_(2))films of 128:1,a selectivity between TiN film and tungsten film of 84:1 and a high surface quality.To understand the mechanism of TiN CMP process,x-ray photoelectron(XPS)spectroscope and potentiodynamic polarization measurement are performed.It is found that the mechanism of TiN CMP process is cyclic reaction polishing mechanism.In addition,both static corrosion rate and the inductively coupled plasma results indicate TiN would not be dissolved,which means that the mechanical removal process of oxide layer plays a decisive role in the material removal rate.Finally,the mechanism of TiN polishing process is given based on the analysis of surface potential and the description of blocking function.
基金Foundation item:National Natural Science Foundation of China(51205387)Science and Technology Commission of Shanghai(11nm0500300)Science and Technology Commission of Shanghai(14XD1425300)
