摘要
为了提升纳米硅溶胶在硅片上SiO2薄膜的化学机械抛光(CMP)效率,用硅烷偶联剂KH550在酸性条件下对硅溶胶进行表面改性。对得到的产物进行化学机械抛光及通过粒度分析仪分析氧化硅粒径和Zeta电位变化,并通过红外光谱分析仪和原子力显微镜分析氧化硅颗粒表面是否接枝上了硅烷偶联剂。结果表明,经过改性后的硅溶胶在红外测试中3400 cm-1附近和1616 cm-1附近出现了N—H的伸缩和弯曲振动峰;原子力显微镜探针离开氧化硅颗粒表面时存在粘弹性;用抛光机测得使用改性后的硅溶胶比使用未改性的硅溶胶去除速率有所提高,并在改性含量0.05%时,去除速率达到最快;改性后的硅溶胶粒子Zeta电位趋向于正向增大,且随着加入改性剂的量从0~0.1%逐渐增加,硅溶胶粒子Zeta电位向正电荷位移更加明显;对未改性的硅溶胶和加入0.05%KH550改性后的硅溶胶进行动态光散射分析,硅溶胶经过改性后粒径D25由65.3 nm增大到73.2 nm,粒径D50由79.2 nm增大到83.5 nm,粒径D99由154.1 nm减小至131.8 nm,而用静态光散射分析时,硅溶胶经过改性后粒径D10由69.0 nm变化为69.6 nm,粒径D50由99.1 nm变化为100.8 nm,粒径D99由191.2 nm变化为194 nm,可以看出D10,D50,D99基本没有发生变化。红外实验和原子力实验证明KH550成功地接枝到颗粒表面;加入改性剂KH550后,不仅改变了氧化硅表面Zeta电位,也改变了水化层;同时使小粒径胶粒的水化层变厚,大粒径的水化层变薄,使Zeta电位由负电荷变为正电荷,从而影响到在硅片上SiO2薄膜的抛光效率。
In order to improve the chemical mechanical polishing(CMP)efficiency of the nano-silica sol on the silicon water SiO2 film.The silica sol was modified under acidic conditions with a silane coupling agent KH550.A part of the obtained product was directly subjected to chemical mechanical polishing and the particle size and Zeta potential change of the silicon oxide were analyzed by a particle size analyzer,and some were subjected to centrifugation,ultrasonication,and drying.After that,the surface of the silica particles was grafted with a silane coupling agent by an infrared spectrum analyzer and an atomic force microscope.Result shows that the modified silica sol exhibits the stretching and bending vibration peaks of N—H near the wave number of 3400 cm^-1 and around 1616 cm^-1 in the infrared test;Viscoelasticity exists when the AFM probe leaves the surface of the silicon oxide particles;The test result of the CP4 polishing machine is that the removal rate of the modified silica sol is higher than that of the unmodified silica sol,and the removal rate is the fastest when the modified content reaches 0.05%;the Zeta potential of the modified silica sol particles tends to increase in the positive direction,and the amount of agent increased gradually from 0 to 0.1%,and the Zeta potential of silica sol particles shifted to positive charge.Dynamic light scattering analysis of unmodified silica sol and silica sol modified with 0.05%KH550,after modification,the particle size D25 increased from 65.3 nm to 73.2 nm,the particle size D50 increased from 79.2 nm to 83.5 nm,and the particle size D99 decreased from 154.1 nm to 131.8 nm,while the silica sol was analyzed by static light scattering.Modified particle size D10 changed from 69.0 nm to 69.6 nm,the particle diameter D50 changed from 99.1 nm to 100.8 nm,and the particle diameter D99 changed from 191.2 nm to 194 nm.It can be seen that D10,D50,D99 basically did not change.We can draw the following conclusions:Infrared and atomic force experiments proved that KH550 was suc
作者
魏震
汪为磊
刘卫丽
罗宏杰
宋志棠
WEI Zhen;WANG Wei-lei;LIU Wei-li;LUO Hong-jie;SONG Zhi-tang(School of Materials Science and Engineering,Shanghai University,Shanghai 200444,China;Shanghai Institute of Microsystem and Information Technology,CAS,Shanghai 200050,China;Xinanna Electronic Technology Co.,Ltd.,Shanghai 201506,China)
出处
《应用化工》
CAS
CSCD
北大核心
2020年第3期536-539,共4页
Applied Chemical Industry
基金
国家重点研发计划(2017YFA0206104,2018YFB0407500)
国家自然科学基金(61874129,61874178,61504157,61622408)
中国科学院战略性先导科技专项(XDPB12)
上海科学技术委员会(17DZ2291300,18DZ2272800)。
关键词
硅溶胶
硅烷偶联剂KH550
改性
ZETA电位
粒径
化学机械抛光
silica sol
silane coupling agent KH550
modification
Zeta potential
particle size
chemical mechanical polishing
