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高k栅介质增强型β-Ga_(2)O_(3) VDMOS器件的单粒子栅穿效应研究 被引量:1
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作者 王韬 张黎莉 +2 位作者 殷亚楠 周昕杰 《固体电子学研究与进展》 CAS 2024年第1期6-12,共7页
以增强型β-Ga_(2)O_(3)VDMOS器件作为研究对象,利用TCAD选择不同的栅介质材料作为研究变量,观察不同器件的单粒子栅穿效应敏感性。高k介质材料Al_(2)O_(3)和HfO_(2)栅介质器件在源漏电压200 V、栅源电压-10 V的偏置条件下能有效抵御线... 以增强型β-Ga_(2)O_(3)VDMOS器件作为研究对象,利用TCAD选择不同的栅介质材料作为研究变量,观察不同器件的单粒子栅穿效应敏感性。高k介质材料Al_(2)O_(3)和HfO_(2)栅介质器件在源漏电压200 V、栅源电压-10 V的偏置条件下能有效抵御线性能量转移为98 MeV·cm^(2)/mg的重离子攻击,SiO_(2)栅介质器件则发生了单粒子栅穿效应(Single event gate rupture,SEGR)。采用HfO_(2)作为栅介质时源漏电流和栅源电流分别下降92%和94%,峰值电场从1.5×10^(7)V/cm下降至2×10^(5)V/cm,避免了SEGR的发生。SEGR发生的原因是沟道处累积了大量的空穴,栅介质中的临界电场超过临界值导致了击穿,而高k栅介质可以有效降低器件敏感区域的碰撞发生率,抑制器件内电子空穴对的进一步生成,降低空穴累积的概率。 展开更多
关键词 氧化镓 单粒子栅穿 TCAD仿真 VDMOS器件
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基于忆阻器混合CMOS的三模冗余锁存器
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作者 肖平旦 +2 位作者 殷亚楠 周昕杰 刘兴强 《中国集成电路》 2024年第1期51-56,共6页
忆阻器的出现为后摩尔时代提供了一个全新的方案以顺应更大的集成密度。为了研究其在数字电路中的应用,发挥潜在优势,本文首先介绍了忆阻器模型及比例逻辑构成的基本逻辑电路,随后提出了基于忆阻器混合CMOS的三模冗余D锁存器。所提出的... 忆阻器的出现为后摩尔时代提供了一个全新的方案以顺应更大的集成密度。为了研究其在数字电路中的应用,发挥潜在优势,本文首先介绍了忆阻器模型及比例逻辑构成的基本逻辑电路,随后提出了基于忆阻器混合CMOS的三模冗余D锁存器。所提出的三模冗余锁存器总体结构主要分为新型忆阻D锁存器的设计和三人表决器构建两个部分,能够在减小电路面积的同时实现电路可靠性的提升,为电路级抗辐射加固技术提供了一种新的思路。 展开更多
关键词 忆阻器 CMOS 三模冗余 锁存器
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Amorphous B-doped graphitic carbon nitride quantum dots with high photoluminescence quantum yield of near 90% and their sensitive detection of Fe^(2+)/Cd^(2+) 被引量:5
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作者 Bo Li Jing Zhang +7 位作者 Ziyu Luo Xinpei Duan Wei-Qing Huang Wangyu Hu Anlian Pan Lei Liao Lang Jiang Gui-Fang Huang 《Science China Materials》 SCIE EI CAS CSCD 2021年第12期3037-3050,共14页
Graphitic carbon nitride quantum dots(CNQDs) are emerging as attractive photoluminescent(PL)materials with excellent application potential in fluorescence imaging and heavy-metal ion detection. However, three limitati... Graphitic carbon nitride quantum dots(CNQDs) are emerging as attractive photoluminescent(PL)materials with excellent application potential in fluorescence imaging and heavy-metal ion detection. However, three limitations, namely, low quantum yields(QYs), self-quenching,and excitation-dependent PL emission behaviors, severely impede the commercial applications of crystalline CNQDs.Here we address these three challenges by synthesizing borondoped amorphous CNQDs via a hydrothermal process followed by the top±down cutting approach. Structural disorder endows the amorphous boron-doped CNQDs(B-CNQDs)with superior elastic strain performance over a wide range of pH values, thus effectively promoting mass transport and reducing exciton quenching. Boron as a dopant could fine-tune the electronic structure and emission properties of the PL material to achieve excitation-independent emission via the formation of uniform boron states. As a result, the amorphous B-CNQDs show unprecedented fluorescent stability(i.e., no obvious fading after two years) and a high QY of 87.4%;these values indicate that the quantum dots obtained are very promising fluorescent materials. Moreover, the B-CNQDs show bright-blue fluorescence under ultraviolet excitation when applied as ink on commercially available paper and are capable of the selective and sensitive detection of Fe^(2+) and Cd^(2+) in the parts-per-billion range. This work presents a novel avenue and scientific insights on amorphous carbon-based fluorescent materials for photoelectrical devices and sensors. 展开更多
关键词 AMORPHOUS boron doping carbon nitride quantum dots fluorescence imaging and sensors
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