A novel super-junction lateral double-diffused metal-oxide--semiconductor field effect transistor （SJ-LDMOSFET） with n-type step doping buffer layer is proposed. The step doping buffer layer almost completely elimin...A novel super-junction lateral double-diffused metal-oxide--semiconductor field effect transistor （SJ-LDMOSFET） with n-type step doping buffer layer is proposed. The step doping buffer layer almost completely eliminates the substrate-assisted depletion effect, modulates lateral electric field and achieves nearly uniform surface field. On the other hand, the buffer layer also provides another conductive path and reduces on-state resistance. In short, the proposed LDMOSFET improves trade-off performance between breakdown voltage （B V） and specific on-state resistance Ron,sp. Compared with the conventional SJ-LDMOSFET, the simulation results indicate that the BV of the SSJ-LDMOSFET is increased from saturation voltage 121.7V to 644.9 V; at the same time, the specific on-state resistance is decreased from 0.314 Ω.cm^2 to 0.14 Ω.cm^2 by virtue of 3D numerical simulations using ISE when the drift region length and the step number are taken as 48μm and 3, respectively.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 60576052, and the National Key Laboratory of Analog IC＇s under Grant No 9140C0903010604.
文摘A novel super-junction lateral double-diffused metal-oxide--semiconductor field effect transistor （SJ-LDMOSFET） with n-type step doping buffer layer is proposed. The step doping buffer layer almost completely eliminates the substrate-assisted depletion effect, modulates lateral electric field and achieves nearly uniform surface field. On the other hand, the buffer layer also provides another conductive path and reduces on-state resistance. In short, the proposed LDMOSFET improves trade-off performance between breakdown voltage （B V） and specific on-state resistance Ron,sp. Compared with the conventional SJ-LDMOSFET, the simulation results indicate that the BV of the SSJ-LDMOSFET is increased from saturation voltage 121.7V to 644.9 V; at the same time, the specific on-state resistance is decreased from 0.314 Ω.cm^2 to 0.14 Ω.cm^2 by virtue of 3D numerical simulations using ISE when the drift region length and the step number are taken as 48μm and 3, respectively.
