摘要
SJ-LDMOST是半导体功率集成技术的核心器件之一,但其击穿电压和比导通电阻之间的优化决定于衬底辅助耗尽效应的消除。这里在分析衬底辅助耗尽效应机理的基础上,将业界消除衬底辅助耗尽效应的主要方法分成两类,并提出通过引入新构造提高漏极纵向击穿电压以彻底消除衬底辅助耗尽效应的途径。
SJ-LDMOST is one of the key devices in the semiconductor power integrated techniques, and the optimum between the breakdown voltage and the specific on-resistance is decided by the suppression of the substrate-assisted-depletion Effect. In the paper, basing on the mechanism analysis on the substrate-assisted-depletion effect, main methods to suppress the effect is classified as two kinds. Furthermore, the method to eliminate the effect, by new structures and improving vertical breakdown voltage at drain side, is proposed.
出处
《电源技术应用》
2012年第8期45-47,共3页
Power Supply Technologles and Applications
基金
江苏省自然科学基金资助(No:BK2011753)
