研究了一种N型50 V RFLDMOS器件的结构。该类型器件对击穿电压BV和导通电阻R_(DSon)等直流参数具有较高要求,一般采用具有两层场板的RESURF结构。通过Taurus TCAD仿真软件对器件最关键的两个部分即场板和N型轻掺杂漂移区进行优化设计,...研究了一种N型50 V RFLDMOS器件的结构。该类型器件对击穿电压BV和导通电阻R_(DSon)等直流参数具有较高要求,一般采用具有两层场板的RESURF结构。通过Taurus TCAD仿真软件对器件最关键的两个部分即场板和N型轻掺杂漂移区进行优化设计,在提高器件击穿电压BV的同时,降低了其导通电阻R_(DSon)。最终仿真得到的击穿电压BV为118 V,导通电阻R_(DSon)为23?·mm。展开更多
The Seebeck coefficient is determined from silicon microchannel plates （Si MCPs） prepared by photo- assisted electrochemical etching at room temperature （25 ℃）. The coefficient of the sample with a pore size of 5...The Seebeck coefficient is determined from silicon microchannel plates （Si MCPs） prepared by photo- assisted electrochemical etching at room temperature （25 ℃）. The coefficient of the sample with a pore size of 5 × 5μm^2, spacing of 1 μm and thickness of about 150 μm is -852μV/K along the edge of the square pore. After doping with boron and phosphorus, the Seebeck coefficient diminishes to 256 μV/K and -117 μV/K along the edge of the square pore, whereas the electrical resistivity values are 7.5 × 10^-3 Ω·cm and 1.9 × 10^-3 Ω·cm, respectively. Our data imply that the Seebeck coefficient of the Si MCPs is related to the electrical resistivity and is consistent with that of bulk silicon. Based on the boron and phosphorus doped samples, a simple device is fabricated to connect the two type Si MCPs to evaluate the Peltier effect. When a proper current passes through the device, the Peltier effect is evidently observed. Based on the experimental data and the theoretical calculation, the estimated intrinsic figure of merit ZT of the unicouple device and thermal conductivity of the Si MCPs are 0.007 and 50 W/（m.K）, respectively.展开更多
文摘研究了一种N型50 V RFLDMOS器件的结构。该类型器件对击穿电压BV和导通电阻R_(DSon)等直流参数具有较高要求,一般采用具有两层场板的RESURF结构。通过Taurus TCAD仿真软件对器件最关键的两个部分即场板和N型轻掺杂漂移区进行优化设计,在提高器件击穿电压BV的同时,降低了其导通电阻R_(DSon)。最终仿真得到的击穿电压BV为118 V,导通电阻R_(DSon)为23?·mm。
基金Project supported by the Shanghai Fundamental Key Project(No.10JC1404600)the Shanghai Natural Science Foundation(No. 11ZR1411000)+3 种基金the Innovation Program of Shanghai Municipal Education Commission(No.09ZZ46)the International Collaboration Project(No.10520704400)the National Natural Science Foundation of China(Nos.60990312,61076060,61176108)the City University of Hong Kong Strategic Research Grant(SRG)(No.7008009).
文摘The Seebeck coefficient is determined from silicon microchannel plates （Si MCPs） prepared by photo- assisted electrochemical etching at room temperature （25 ℃）. The coefficient of the sample with a pore size of 5 × 5μm^2, spacing of 1 μm and thickness of about 150 μm is -852μV/K along the edge of the square pore. After doping with boron and phosphorus, the Seebeck coefficient diminishes to 256 μV/K and -117 μV/K along the edge of the square pore, whereas the electrical resistivity values are 7.5 × 10^-3 Ω·cm and 1.9 × 10^-3 Ω·cm, respectively. Our data imply that the Seebeck coefficient of the Si MCPs is related to the electrical resistivity and is consistent with that of bulk silicon. Based on the boron and phosphorus doped samples, a simple device is fabricated to connect the two type Si MCPs to evaluate the Peltier effect. When a proper current passes through the device, the Peltier effect is evidently observed. Based on the experimental data and the theoretical calculation, the estimated intrinsic figure of merit ZT of the unicouple device and thermal conductivity of the Si MCPs are 0.007 and 50 W/（m.K）, respectively.
