摘要
研究了一种N型50 V RFLDMOS器件的结构。该类型器件对击穿电压BV和导通电阻R_(DSon)等直流参数具有较高要求,一般采用具有两层场板的RESURF结构。通过Taurus TCAD仿真软件对器件最关键的两个部分即场板和N型轻掺杂漂移区进行优化设计,在提高器件击穿电压BV的同时,降低了其导通电阻R_(DSon)。最终仿真得到的击穿电压BV为118 V,导通电阻R_(DSon)为23?·mm。
The structure of an N-type 50 V RFLDMOS was investigated. In order to obtain a higher breakdown voltage （BV） and a lower on-resistance （RDSon）, the RESURF （Reduced Surface Field） structure with two field plates （gate shield, or G-shield） was applied. Considering the field plates and N-type light doped drift region properly, the BV should be improved while the RDSon should be reduced. The device characteristics were analyzed by employing the device simulator Taurus TCAD. With the optimized RESURF structure, the simulated BV and RDSon are 118 V and 23 Ω·mm, respectively.
出处
《电子元件与材料》
CAS
CSCD
2016年第8期50-54,共5页
Electronic Components And Materials
基金
国家科技02重大专项项目资助(No.2012ZX02502)
