We demonstrate the in situ growth of ultra-thin InA s nanowires with an epitaxial Al film by molecular-beam epitaxy.Our InAs nanowire diameter(~30 nm)is much thinner than before(~100 nm).The ultra-thin InAs nanowires ...We demonstrate the in situ growth of ultra-thin InA s nanowires with an epitaxial Al film by molecular-beam epitaxy.Our InAs nanowire diameter(~30 nm)is much thinner than before(~100 nm).The ultra-thin InAs nanowires are pure phase crystals for various different growth directions.Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire.Quantum transport study on these devices resolves a hard induced superconducting gap and 2 e-periodic Coulomb blockade at zero magnetic field,a necessary step for future Majorana experiments.By reducing wire diameter,our work presents a promising route for reaching fewer sub-band regime in Major ana nanowire devices.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.92065106,61974138,12104053,and 11704364)the Beijing Natural Science Foundation(Grant No.1192017)+2 种基金Tsinghua University Initiative Scientifc Research Programthe support from Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant No.Y2021043)China Postdoctoral Science Foundation(Grant Nos.2020M670173 and 2020T130058)。
文摘We demonstrate the in situ growth of ultra-thin InA s nanowires with an epitaxial Al film by molecular-beam epitaxy.Our InAs nanowire diameter(~30 nm)is much thinner than before(~100 nm).The ultra-thin InAs nanowires are pure phase crystals for various different growth directions.Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire.Quantum transport study on these devices resolves a hard induced superconducting gap and 2 e-periodic Coulomb blockade at zero magnetic field,a necessary step for future Majorana experiments.By reducing wire diameter,our work presents a promising route for reaching fewer sub-band regime in Major ana nanowire devices.
