We report high transition temperature superconductivity in one unit-cell(UC)thick FeSe films grown on a Seetched SrTiO_(3)(001)substrate by molecular beam epitaxy(MBE).A superconducting gap as large as 20 meV and the ...We report high transition temperature superconductivity in one unit-cell(UC)thick FeSe films grown on a Seetched SrTiO_(3)(001)substrate by molecular beam epitaxy(MBE).A superconducting gap as large as 20 meV and the magnetic field induced vortex state revealed by in situ scanning tunneling microscopy(STM)suggest that the superconductivity of the 1 UC FeSe films could occur around 77K.The control transport measurement shows that the onset superconductivity temperature is well above 50K.Our work not only demonstrates a powerful way for finding new superconductors and for raising Tc,but also provides a well-defined platform for systematic studies of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 10721404 and 11134008the National Basic Research Program of China under Grant No 2009CB929400.
文摘We report high transition temperature superconductivity in one unit-cell(UC)thick FeSe films grown on a Seetched SrTiO_(3)(001)substrate by molecular beam epitaxy(MBE).A superconducting gap as large as 20 meV and the magnetic field induced vortex state revealed by in situ scanning tunneling microscopy(STM)suggest that the superconductivity of the 1 UC FeSe films could occur around 77K.The control transport measurement shows that the onset superconductivity temperature is well above 50K.Our work not only demonstrates a powerful way for finding new superconductors and for raising Tc,but also provides a well-defined platform for systematic studies of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.