利用掩膜注氧隔离技术(Masked SIMOX)制备图形化SOI衬底,采用与常规1μm SOI CMOS工艺兼容的工艺流程,制备了图形化SOI LDMOS功率器件。器件的输出特性曲线中未呈现翘曲效应、开态击穿电压高于6V、关态击穿电压达到13V、泄漏电流的量级...利用掩膜注氧隔离技术(Masked SIMOX)制备图形化SOI衬底,采用与常规1μm SOI CMOS工艺兼容的工艺流程,制备了图形化SOI LDMOS功率器件。器件的输出特性曲线中未呈现翘曲效应、开态击穿电压高于6V、关态击穿电压达到13V、泄漏电流的量级为10-8A;截止频率为8GHz;当漏工作电压3.6V,频率为1GHz时,小信号电压增益为6dB。直流和射频电学性能表明,图形化SOI LDMOS结构作为射频功率器件具有较好的开发前景。展开更多
A novel patterned-SOI LDMOS structure with a silicon window beneath the p well is proposed.The performance is simulated numerically.In comparison to SOI counterpart,the off-state and the on-state breakdown voltage can...A novel patterned-SOI LDMOS structure with a silicon window beneath the p well is proposed.The performance is simulated numerically.In comparison to SOI counterpart,the off-state and the on-state breakdown voltage can increase by 57% and 70% respectively;transconductance is flatter;I-V curves take no sign of kink in the saturation region;the device temperature is much lower even at high input power;the floating body effect and the self-heating effect are distinctly suppressed.Furthermore,the advantage of low leakage current and low output capacitance in SOI structures does not degrade.The proposed structure will be a promising choice to improve the performance and reliability of SOI power device.展开更多
文摘A novel patterned-SOI LDMOS structure with a silicon window beneath the p well is proposed.The performance is simulated numerically.In comparison to SOI counterpart,the off-state and the on-state breakdown voltage can increase by 57% and 70% respectively;transconductance is flatter;I-V curves take no sign of kink in the saturation region;the device temperature is much lower even at high input power;the floating body effect and the self-heating effect are distinctly suppressed.Furthermore,the advantage of low leakage current and low output capacitance in SOI structures does not degrade.The proposed structure will be a promising choice to improve the performance and reliability of SOI power device.
基金National Natural Science Foundation of China (50402026)Science Technology Foundation of Zhejiang Province in China (2008C31002)National Science Foundation of Shanghai (09ZR1437700)
文摘研究了阻挡层 Al2O3对应变 SiGe 上 HfO2薄膜的热稳定性和电学可靠性的影响。高分辨透射电镜(HRTEM)像表明,阻挡层使HfO2在 700 ℃温度下退火后仍然是非晶的。散能 X 射线谱(EDS)分析表明,阻挡层抑制了 Si 原子在 HfO2薄膜中的扩散。X 射线光电子谱(XPS)测试表明,阻挡层抑制了界面处 HfSiO 和 GeOx的生长。电学测试分析说明,带有阻挡层的 MIS 电容的电学性能得到提高,包括60Co γ射线辐射后较高的电容密度、较低的缺陷密度、以及较小的平带电压漂移。
