摘要
对功率器件中常用的体连接技术进行了改进,利用一次硼离子注入技术形成体连接。采用与常规1μmSOI(硅-绝缘体)CMOS工艺兼容的工艺流程,在SIMOXSOI片上制备了LDMOS结构的功率器件。器件的输出特性曲线在饱和区平滑,未呈现翘曲现象,说明形成的体连接有效地抑制了部分耗尽器件的浮体效应。当漂移区长度为2μm时,开态击穿电压达到10V,最大跨导17.5mS/mm。当漏偏压为5V时,SOI器件的泄漏电流数量级为1nA,而相应体硅结构器件的泄漏电流为1000nA。电学性能表明,这种改善的体连接技术能制备出高性能的SOI功率器件。
Conventional body contact technology was improved and achieved by one-time boron ion implantation. With this improved body contact and the process technology compatible to conventional lμmSOI CMOS technology, LDMOSFETs were fabricated on SIMOX SOI wafer, and DC characterized successfully. The output characteristic curves were flat and no kink effects were shown. The on-state breakdown voltage was up to 10V, and the transconductance was 17.5mS/mm. The leakage current was about three orders lower than that of bulk counterpart. This improved body contact technology was suitable to manufacture high quality SOI LDMOSFET devices.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第7期523-525,共3页
Semiconductor Technology
基金
上海市自然科学基金资助项目(03ZR14109)
