A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,fr...A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,from which the total ionizing dose(TID) and the synergistic damage mechanism of MRAM were analyzed.In addition,DC,AC,and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system.The radiation-sensitive parameters were obtained through analyzing the data.Because of the magnetic field applied on the MRAM while testing the synergistic effects,shallow trench isolation leakage and Frenkel–Poole emission due to synergistic effects were smaller than that of TID,and hence radiation damage of the synergistic effects was also lower.展开更多
It was widely thought that 3 variants of Kunitz type trypsin inhibitor(SBTi A 2) existed in soybean seed storage protein.Three of codominant alleles Ti a,Ti b and Ti c were identified to decode these SBTi A 2 inhibito...It was widely thought that 3 variants of Kunitz type trypsin inhibitor(SBTi A 2) existed in soybean seed storage protein.Three of codominant alleles Ti a,Ti b and Ti c were identified to decode these SBTi A 2 inhibitors and the amino acid sequences of them were determined,of which one or more different amino acid were found.Ti d was a new variant allele of SBTi A 2 discovered after analyzing more than 15 000 samples of soybean seed in China.In order to study the structure features of Ti d protein,the amino acid sequence of this protein was deduced from its coding region which was amplified by PCR from soybean genomic DNA and sequenced.By comparison with Ti a protein,two different amino acid residue were found between Ti a and Ti d proteins.One was an extra Ala inserted in the signal peptide of Ti d,with 8 residues from N terminal,and the other existed in the mature protein,with Glu 69 in Ti a protein turned into Lys 69 in Ti d protein.The amino acid sequence of Ti d mature protein was also different from those of Ti a and Ti b.展开更多
The total ionizing radiation（TID） response of commercial NPN silicon germanium hetero-junction bipolar transistors（Si Ge HBTs） produced domestically are investigated under dose rates of 800 m Gy（Si）/s and 1.3 m...The total ionizing radiation（TID） response of commercial NPN silicon germanium hetero-junction bipolar transistors（Si Ge HBTs） produced domestically are investigated under dose rates of 800 m Gy（Si）/s and 1.3 m Gy（Si）/s with a Co-60 gamma irradiation source. The changes of transistor parameters such as Gummel characteristics, and excess base current before and after irradiation, are examined. The results of the experiments show that for the KT1151, the radiation damage is slightly different under the different dose rates after prolonged annealing, and shows a time dependent effect（TDE）. For the KT9041, however, the degradations of low dose rate irradiation is higher than for the high dose rate, demonstrating that there is a potential enhanced low dose rate sensitivity（ELDRS） effect for the KT9041. The possible underlying physical mechanisms of the different dose rates responses induced by the gamma rays are discussed.展开更多
In this paper, total ionizing dose effect of NMOS transistors in advanced CMOS technology are exam- ined. The radiation tests are performed at 60Co sources at the dose rate of 50 rad （Si）/s. The investigation＇s res...In this paper, total ionizing dose effect of NMOS transistors in advanced CMOS technology are exam- ined. The radiation tests are performed at 60Co sources at the dose rate of 50 rad （Si）/s. The investigation＇s results show that the radiation-induced charge buildup in the gate oxide can be ignored, and the field oxide isolation struc- ture is the main total dose problem. The total ionizing dose （TID） radiation effects of field oxide parasitic transistors are studied in detail. An analytical model of radiation defect charge induced by TID damage in field oxide is estab- lished. The I-V characteristics of the NMOS parasitic transistors at different doses are modeled by using a surface potential method. The modeling method is verified by the experimental I V characteristics of 180 nm commer- cial NMOS device induced by TID radiation at different doses. The model results are in good agreement with the radiation experimental results, which shows the analytical model can accurately predict the radiation response characteristics of advanced bulk CMOS technology device.展开更多
Groups of a typical operational amplifier-μA741 were irradiated in a cobalt unit, each group accumulating a different total ionizing dose （TID）. The results showed that the TID caused power consumption current and ...Groups of a typical operational amplifier-μA741 were irradiated in a cobalt unit, each group accumulating a different total ionizing dose （TID）. The results showed that the TID caused power consumption current and slew rate （SR） to degenerate in ultra-linearity, owing to a severe reduction in the current gain of the internal LPNP transistors. Pulsed X-ray irradiation experiments were carried out on the μA741 groups with different values, and the results revealed that the impact on the response to the pulsed X-ray irradiation was greater when the devices absorbed more TID. The mechanism for this is explained on the basis of the circuit construction of the μA741; the sensitive parameters of the circuit were obtained via simulation on SP1CE. The simulation results additionally showed that if the sensitive parameters were optimized, the duration of interruption caused by the pulsed X-ray irradiation would be reduced significantly. In addition, several proposals are provided for hardening the devices.展开更多
On the basis of a detailed discussion of the development of total ionizing dose （TID） effect model, a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxide- s...On the basis of a detailed discussion of the development of total ionizing dose （TID） effect model, a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxide- semiconductor field effect transistors is developed. An exponential approximation is proposed to simplify the trap charge calculation. Irradiation experiments with 60Co gamma rays for IO and core devices are performed to validate the simulation results. An excellent agreement of measurement with the simulation results is observed.展开更多
With the development of rail transit, transport integrated development(TID) has become a key issue in land development and utilization. This paper analyzed core theories and design principles of TID, analyzed the succ...With the development of rail transit, transport integrated development(TID) has become a key issue in land development and utilization. This paper analyzed core theories and design principles of TID, analyzed the successful experience of Kowloon City in Hong Kong, compared success and failure of some TID projects in Chongqing Municipality, i.e. Nanping, Chaotianmen, Lianglukou and Guanyinqiao, and fully demonstrated that TID could promote the internal update and development of the city. TID concepts for Chongqing were proposed as "rail transit stations should ensure mixed high-benefit land uses with multiple functions, public open spaces with a certain ratio, a high-efficiency pedestrian system with comfortable environment, high-efficiency seamless transfer and connection modes.展开更多
Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator （PDSOI） NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly c...Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator （PDSOI） NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly correlates with the bias configuration during irradiation. It is found that the high body doping concentration can make the devices less sensitive to the single transistor latchup effect, and the onset drain voltage at which latchup occurs can degrade as the total dose level rises. The mechanism of band-to-band tunneling （BBT） has been discussed. Two-dimensional simulations were conducted to evaluate the BBT effect. It is demonstrated that BBT combined with the positive trapped charge in the buried oxide （BOX） contributes a lot to the latchup effect.展开更多
Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work comb...Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation effects.Here,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/cm2.Large negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide layer.The stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is radiation-hardened.Specially,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet resistance.Having analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.展开更多
The Dark Matter Particle Explorer(DAMPE) is being constructed as a scientific satellite to observe high energy cosmic rays in space.As a crucial detector of DAMPE,the BGO calorimeter consists of 1848 PMT dynode signal...The Dark Matter Particle Explorer(DAMPE) is being constructed as a scientific satellite to observe high energy cosmic rays in space.As a crucial detector of DAMPE,the BGO calorimeter consists of 1848 PMT dynode signals which bring difficulties in front-end electronics on the space-limited and power-limited satellite platform.To overcome the challenge,a low-noise,low-power and high-integration ASIC chip,named VA32HDR14.2,is taken into account.In order to evaluate the radiation tolerance of the chip in space radiation environment,both single event effect(SEE) and total ionizing dose(TID) tests were performed.The SEE test result shows that the effective linear energy transfer(LET) threshold of single event latch-up(SEL) of the chip is around 23.0 MeVcm^2/mg,which is relatively sensitive,thus protection methods must be taken in the electronics design.The TID test result shows that the TID performance of the chip is higher than 25 Krad(Si),which satisfies the design specification.展开更多
Objective: Type 1 diabetes mellitus (T1D) and dyslipidemia (DLP) increase the risk of cardiovascular disease (CVD). The objective of this study was to evaluate the progress and perspective of dyslipidemia in young T1D...Objective: Type 1 diabetes mellitus (T1D) and dyslipidemia (DLP) increase the risk of cardiovascular disease (CVD). The objective of this study was to evaluate the progress and perspective of dyslipidemia in young T1D patients . Materials and Methods: The study was cross-sectional and descriptive design. Medical records of T1D patients were followed at an endocrinology service from 2008-2014. The collected data included gender, age, duration of T1D, body mass index (BMI), glycated hemoglobin (HbA1c), total cholesterol (TC), HDL, LDL and triglycerides (TG). Results: 126 T1D patients were recruited: 69 male (54.8%) and 57 female (45.2%) with a mean of age 16.4 (±0.18) and 16.5 (±0.18), respectively. Diabetes duration and baseline HbA1c were 14.82 (±2.11) and 8.68 (±1.21), respectively. The HbA1c (average range of HbA1c 6.5% to 10.7%) increased significantly while following five years by 2.9% (p < 0.001). The prevalence of overweight and obese teens was increasing from the 1st year to the following five years later. In contrast, the underweight and healthy subjects were decreasing for the same subsequent years. Means of HbA1c were significantly higher among overweight and obese categories throughout following years. All lipid profile revealed significant increase during five years follow-up study. The prevalence of risk TC/HDL ratio (< 4.1) gradually raised in the last year follow-up by 52.1% comparing to the baseline risk ratio (0.8%). The study of TC/HDL ratio with BMI categories revealed that average T1D patients had an ideal ratio (n = 97) in the 1st year measurement. After five years follow-up study, the frequency of ideal ratio declined among all categories in the same rate. Risk TC/HDL ratio in the last year of the study showed that average group had more risk ratio measurements (n = 47) in contrast to the 1st year measurement (n = 1). The significant positive correlations were reported between HbA1c and DLP as shown in figure (r2 = 0.85). HbA1c and BMI percentile analyses during long follow-up years were展开更多
Regulatory T cells （Tregs） are critical for the peripheral maintenance of the autoreactive T cells in autoimmune disorders such as type 1 diabetes （TID）. Pharmacological inhibition of Janus tyrosine kinase 3 （JAK...Regulatory T cells （Tregs） are critical for the peripheral maintenance of the autoreactive T cells in autoimmune disorders such as type 1 diabetes （TID）. Pharmacological inhibition of Janus tyrosine kinase 3 （JAK3） has been proposed as a basis for new treatment modalities against autoimmunity and allogeneic responses. Targeting JAK3 with an inhibitor has previously been shown to exhibit protective action against the development of T 1D in non-obese diabetic （NOD） mice. As the mechanism of such preventative action has been unknown, we hypothesized that JAK3 inhibition induces generation of Tregs. Here, we show that the JAK3 inhibitor 4-（4＇-hydroxyphenyl）-amino-6,7-dimethoxyquinazoline （WHI-P131） suppresses proliferation of short-term cultured NOD CD4＋ T cells through induction of apoptosis, while promoting survival of a particular population of long-term cultured cells. It was found that the surviving cells were not of the CD4＋CD25＋FoxP3＋ phenotype. They secreted decreased amounts of IL-IO, IL-4 and interferon （IFN）-y compared to the cells not exposed to the optimal concentrations of JAK3 inhibitor. However, an elevated transforming growth factor （TGF）-β secretion was detected in their supernatants. In vivo treatment of prediabetic NOD mice with WHI-P131 did not affect the frequency and number of splenic and pancreatic lymph node CD4＋FoxP3＋ Tregs, while generating an elevated numbers of CD4＋FoxP3- TGF-β-secreting T cells. In conclusion, our data suggest an induction of TGF-β-secreting CD4＋ T cells as the underlying mechanism for antidiabetogenic effects obtained by the treatment with a JAK3 inhibitor. To our knowledge, this is the first report of the JAK3 inhibitor activity in the context of the murine Tregs.展开更多
Based on the observations of a meter-wave aperture synthesis radio telescope,as the scale length of ionospheric irregularity is greatly larger than the baseline length of interferometer,the phase error induced by the ...Based on the observations of a meter-wave aperture synthesis radio telescope,as the scale length of ionospheric irregularity is greatly larger than the baseline length of interferometer,the phase error induced by the output signal of interferometer due to ionosphere is proportional to the baseline length and accordingly the expressions for extracting the information about ionosphere are derived.By using the ray theory and considering that the antenna is always tracking to the radio source in astronomical observation,the wave motion expression of traveling ionospheric disturbance observed in the total electron content is also derived,which is consistent with that obtained from the conception of thin-phase screen;then the Doppler velocity due to antenna tracking is introduced.Finally the inversion analysis for the horizontal phase velocity of TID from observed data is given.展开更多
基金supported by the National Natural Science Foundation of China(No.11705276)the West Light Foundation of the Chinese Academy of Sciences(No.CAS-LWC-2017-2)
文摘A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,from which the total ionizing dose(TID) and the synergistic damage mechanism of MRAM were analyzed.In addition,DC,AC,and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system.The radiation-sensitive parameters were obtained through analyzing the data.Because of the magnetic field applied on the MRAM while testing the synergistic effects,shallow trench isolation leakage and Frenkel–Poole emission due to synergistic effects were smaller than that of TID,and hence radiation damage of the synergistic effects was also lower.
文摘It was widely thought that 3 variants of Kunitz type trypsin inhibitor(SBTi A 2) existed in soybean seed storage protein.Three of codominant alleles Ti a,Ti b and Ti c were identified to decode these SBTi A 2 inhibitors and the amino acid sequences of them were determined,of which one or more different amino acid were found.Ti d was a new variant allele of SBTi A 2 discovered after analyzing more than 15 000 samples of soybean seed in China.In order to study the structure features of Ti d protein,the amino acid sequence of this protein was deduced from its coding region which was amplified by PCR from soybean genomic DNA and sequenced.By comparison with Ti a protein,two different amino acid residue were found between Ti a and Ti d proteins.One was an extra Ala inserted in the signal peptide of Ti d,with 8 residues from N terminal,and the other existed in the mature protein,with Glu 69 in Ti a protein turned into Lys 69 in Ti d protein.The amino acid sequence of Ti d mature protein was also different from those of Ti a and Ti b.
文摘The total ionizing radiation（TID） response of commercial NPN silicon germanium hetero-junction bipolar transistors（Si Ge HBTs） produced domestically are investigated under dose rates of 800 m Gy（Si）/s and 1.3 m Gy（Si）/s with a Co-60 gamma irradiation source. The changes of transistor parameters such as Gummel characteristics, and excess base current before and after irradiation, are examined. The results of the experiments show that for the KT1151, the radiation damage is slightly different under the different dose rates after prolonged annealing, and shows a time dependent effect（TDE）. For the KT9041, however, the degradations of low dose rate irradiation is higher than for the high dose rate, demonstrating that there is a potential enhanced low dose rate sensitivity（ELDRS） effect for the KT9041. The possible underlying physical mechanisms of the different dose rates responses induced by the gamma rays are discussed.
基金Project supported by the National Natural Science Foundation of China(No.11305126)
文摘In this paper, total ionizing dose effect of NMOS transistors in advanced CMOS technology are exam- ined. The radiation tests are performed at 60Co sources at the dose rate of 50 rad （Si）/s. The investigation＇s results show that the radiation-induced charge buildup in the gate oxide can be ignored, and the field oxide isolation struc- ture is the main total dose problem. The total ionizing dose （TID） radiation effects of field oxide parasitic transistors are studied in detail. An analytical model of radiation defect charge induced by TID damage in field oxide is estab- lished. The I-V characteristics of the NMOS parasitic transistors at different doses are modeled by using a surface potential method. The modeling method is verified by the experimental I V characteristics of 180 nm commer- cial NMOS device induced by TID radiation at different doses. The model results are in good agreement with the radiation experimental results, which shows the analytical model can accurately predict the radiation response characteristics of advanced bulk CMOS technology device.
基金supported by the State Key Laboratory Foundation(Grant No.SKLIPR1212)
文摘Groups of a typical operational amplifier-μA741 were irradiated in a cobalt unit, each group accumulating a different total ionizing dose （TID）. The results showed that the TID caused power consumption current and slew rate （SR） to degenerate in ultra-linearity, owing to a severe reduction in the current gain of the internal LPNP transistors. Pulsed X-ray irradiation experiments were carried out on the μA741 groups with different values, and the results revealed that the impact on the response to the pulsed X-ray irradiation was greater when the devices absorbed more TID. The mechanism for this is explained on the basis of the circuit construction of the μA741; the sensitive parameters of the circuit were obtained via simulation on SP1CE. The simulation results additionally showed that if the sensitive parameters were optimized, the duration of interruption caused by the pulsed X-ray irradiation would be reduced significantly. In addition, several proposals are provided for hardening the devices.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61404151 and 61574153
文摘On the basis of a detailed discussion of the development of total ionizing dose （TID） effect model, a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxide- semiconductor field effect transistors is developed. An exponential approximation is proposed to simplify the trap charge calculation. Irradiation experiments with 60Co gamma rays for IO and core devices are performed to validate the simulation results. An excellent agreement of measurement with the simulation results is observed.
基金Sponsored by National Natural Science Foundation of China(51408507)China Postdoctoral Science Foundation(2015M570385)
文摘With the development of rail transit, transport integrated development(TID) has become a key issue in land development and utilization. This paper analyzed core theories and design principles of TID, analyzed the successful experience of Kowloon City in Hong Kong, compared success and failure of some TID projects in Chongqing Municipality, i.e. Nanping, Chaotianmen, Lianglukou and Guanyinqiao, and fully demonstrated that TID could promote the internal update and development of the city. TID concepts for Chongqing were proposed as "rail transit stations should ensure mixed high-benefit land uses with multiple functions, public open spaces with a certain ratio, a high-efficiency pedestrian system with comfortable environment, high-efficiency seamless transfer and connection modes.
基金Project supported by Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100)
文摘Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator （PDSOI） NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly correlates with the bias configuration during irradiation. It is found that the high body doping concentration can make the devices less sensitive to the single transistor latchup effect, and the onset drain voltage at which latchup occurs can degrade as the total dose level rises. The mechanism of band-to-band tunneling （BBT） has been discussed. Two-dimensional simulations were conducted to evaluate the BBT effect. It is demonstrated that BBT combined with the positive trapped charge in the buried oxide （BOX） contributes a lot to the latchup effect.
基金This work was financially supported by the National Natural Science Foundation of China(No.61704189)the Common Information System Equipment Pre-Research Special Technology Project(31513020404-2)Youth Innovation Promotion Association of Chinese Academy of Sciences and the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,and the Key Research Program of Frontier Sciences,CAS(Grant ZDBS-LY-JSC015)。
文摘Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation effects.Here,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/cm2.Large negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide layer.The stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is radiation-hardened.Specially,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet resistance.Having analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.
基金Supported by the Strategic Priority Research Program on Space Science,the Chinese Academy of Sciences(No.XDA04040202-4)
文摘The Dark Matter Particle Explorer(DAMPE) is being constructed as a scientific satellite to observe high energy cosmic rays in space.As a crucial detector of DAMPE,the BGO calorimeter consists of 1848 PMT dynode signals which bring difficulties in front-end electronics on the space-limited and power-limited satellite platform.To overcome the challenge,a low-noise,low-power and high-integration ASIC chip,named VA32HDR14.2,is taken into account.In order to evaluate the radiation tolerance of the chip in space radiation environment,both single event effect(SEE) and total ionizing dose(TID) tests were performed.The SEE test result shows that the effective linear energy transfer(LET) threshold of single event latch-up(SEL) of the chip is around 23.0 MeVcm^2/mg,which is relatively sensitive,thus protection methods must be taken in the electronics design.The TID test result shows that the TID performance of the chip is higher than 25 Krad(Si),which satisfies the design specification.
文摘Objective: Type 1 diabetes mellitus (T1D) and dyslipidemia (DLP) increase the risk of cardiovascular disease (CVD). The objective of this study was to evaluate the progress and perspective of dyslipidemia in young T1D patients . Materials and Methods: The study was cross-sectional and descriptive design. Medical records of T1D patients were followed at an endocrinology service from 2008-2014. The collected data included gender, age, duration of T1D, body mass index (BMI), glycated hemoglobin (HbA1c), total cholesterol (TC), HDL, LDL and triglycerides (TG). Results: 126 T1D patients were recruited: 69 male (54.8%) and 57 female (45.2%) with a mean of age 16.4 (±0.18) and 16.5 (±0.18), respectively. Diabetes duration and baseline HbA1c were 14.82 (±2.11) and 8.68 (±1.21), respectively. The HbA1c (average range of HbA1c 6.5% to 10.7%) increased significantly while following five years by 2.9% (p < 0.001). The prevalence of overweight and obese teens was increasing from the 1st year to the following five years later. In contrast, the underweight and healthy subjects were decreasing for the same subsequent years. Means of HbA1c were significantly higher among overweight and obese categories throughout following years. All lipid profile revealed significant increase during five years follow-up study. The prevalence of risk TC/HDL ratio (< 4.1) gradually raised in the last year follow-up by 52.1% comparing to the baseline risk ratio (0.8%). The study of TC/HDL ratio with BMI categories revealed that average T1D patients had an ideal ratio (n = 97) in the 1st year measurement. After five years follow-up study, the frequency of ideal ratio declined among all categories in the same rate. Risk TC/HDL ratio in the last year of the study showed that average group had more risk ratio measurements (n = 47) in contrast to the 1st year measurement (n = 1). The significant positive correlations were reported between HbA1c and DLP as shown in figure (r2 = 0.85). HbA1c and BMI percentile analyses during long follow-up years were
文摘Regulatory T cells （Tregs） are critical for the peripheral maintenance of the autoreactive T cells in autoimmune disorders such as type 1 diabetes （TID）. Pharmacological inhibition of Janus tyrosine kinase 3 （JAK3） has been proposed as a basis for new treatment modalities against autoimmunity and allogeneic responses. Targeting JAK3 with an inhibitor has previously been shown to exhibit protective action against the development of T 1D in non-obese diabetic （NOD） mice. As the mechanism of such preventative action has been unknown, we hypothesized that JAK3 inhibition induces generation of Tregs. Here, we show that the JAK3 inhibitor 4-（4＇-hydroxyphenyl）-amino-6,7-dimethoxyquinazoline （WHI-P131） suppresses proliferation of short-term cultured NOD CD4＋ T cells through induction of apoptosis, while promoting survival of a particular population of long-term cultured cells. It was found that the surviving cells were not of the CD4＋CD25＋FoxP3＋ phenotype. They secreted decreased amounts of IL-IO, IL-4 and interferon （IFN）-y compared to the cells not exposed to the optimal concentrations of JAK3 inhibitor. However, an elevated transforming growth factor （TGF）-β secretion was detected in their supernatants. In vivo treatment of prediabetic NOD mice with WHI-P131 did not affect the frequency and number of splenic and pancreatic lymph node CD4＋FoxP3＋ Tregs, while generating an elevated numbers of CD4＋FoxP3- TGF-β-secreting T cells. In conclusion, our data suggest an induction of TGF-β-secreting CD4＋ T cells as the underlying mechanism for antidiabetogenic effects obtained by the treatment with a JAK3 inhibitor. To our knowledge, this is the first report of the JAK3 inhibitor activity in the context of the murine Tregs.
基金Project supported by the National Natural Science Foundation of China.
文摘Based on the observations of a meter-wave aperture synthesis radio telescope,as the scale length of ionospheric irregularity is greatly larger than the baseline length of interferometer,the phase error induced by the output signal of interferometer due to ionosphere is proportional to the baseline length and accordingly the expressions for extracting the information about ionosphere are derived.By using the ray theory and considering that the antenna is always tracking to the radio source in astronomical observation,the wave motion expression of traveling ionospheric disturbance observed in the total electron content is also derived,which is consistent with that obtained from the conception of thin-phase screen;then the Doppler velocity due to antenna tracking is introduced.Finally the inversion analysis for the horizontal phase velocity of TID from observed data is given.
