摘要
The ZnO nanostructures have been synthesized and studied as the sensing element for the detection of H2S. The ZnO nanostructures were synthesized by hydrothermal method followed by sonication for different interval of time i.e. 30, 60, 90 and 120 min. By using screen printing method, thick films of synthesized ZnO nanostructure were deposited on glass substrate. Gas sensing properties of ZnO nanostructure thick films were studied for low concentration H2S gas at room temperature. The effects of morphology of synthesized ZnO nanostructure on gas sensing properties were studied and discussed. ZnO nanostructure synthesized by this method can be used as a promising material for semiconductor gas sensor to detect poisonous gas like H2S at room temperature with high sensitivity and selectivity.
The ZnO nanostructures have been synthesized and studied as the sensing element for the detection of H2S. The ZnO nanostructures were synthesized by hydrothermal method followed by sonication for different interval of time i.e. 30, 60, 90 and 120 min. By using screen printing method, thick films of synthesized ZnO nanostructure were deposited on glass substrate. Gas sensing properties of ZnO nanostructure thick films were studied for low concentration H2S gas at room temperature. The effects of morphology of synthesized ZnO nanostructure on gas sensing properties were studied and discussed. ZnO nanostructure synthesized by this method can be used as a promising material for semiconductor gas sensor to detect poisonous gas like H2S at room temperature with high sensitivity and selectivity.
