摘要
<div style="text-align:justify;"> In this paper, we report a single-mode Fabry-Pérot long wave infrared quantum cascade lasers based on the double phonon resonance active region design. For room temperature CW operation, the wafer with 35 stages was processed into buried heterostructure lasers. For a 4 mm long and 13 μm wide laser with high-reflectivity (HR) coating on the rear facet, continuous wave output power of 43 mW at 288 K and 5 mW at 303 K is obtained with threshold current densities of 2.17 and 2.7 kA/cm2. The lasing wavelength is around 10.5 μm. Single mode emission was observed for this particular device over the whole investigated current and temperature range. </div>
<div style="text-align:justify;"> In this paper, we report a single-mode Fabry-Pérot long wave infrared quantum cascade lasers based on the double phonon resonance active region design. For room temperature CW operation, the wafer with 35 stages was processed into buried heterostructure lasers. For a 4 mm long and 13 μm wide laser with high-reflectivity (HR) coating on the rear facet, continuous wave output power of 43 mW at 288 K and 5 mW at 303 K is obtained with threshold current densities of 2.17 and 2.7 kA/cm2. The lasing wavelength is around 10.5 μm. Single mode emission was observed for this particular device over the whole investigated current and temperature range. </div>
作者
Shouzhu Niu
Junqi Liu
Jinchuan Zhang
Ning Zhuo
Shenqiang Zhai
Xiaohua Wang
Zhipeng Wei
Shouzhu Niu;Junqi Liu;Jinchuan Zhang;Ning Zhuo;Shenqiang Zhai;Xiaohua Wang;Zhipeng Wei(State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, Changchun, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China)
