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多晶硅定向凝固铸锭炉热场改进数值模拟研究 被引量:2

Numerical Simulation of the Optimized Hot Zone Structure of the Multi-Crystalline Silicon Directional Solidification Furnace for Photovoltaics
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摘要 多晶硅定向凝固铸锭炉的热场对于生长高质量的多晶硅极为重要。本文利用CGSim软件对多晶硅铸锭炉热场的底部边缘、侧边增加保温材料的改进并进行了数值模拟研究,与未改进的热场进行了对比,分析了这些改进对温场、流场和固液生长界面的影响。模拟结果表明,热场改进后,等温线在坩埚底部边缘和侧边部位变得平缓,抑制了坩埚底部边缘的散热以及边缘横向晶的产生,熔体流动更加有利于杂质排出,多晶硅的定向凝固生长质量得到了提高。 The hot zone of the directional solidification multi-crystalline silicon furnace is extremely important to the quality of multi-crystalline silicon. In this paper, numerical simulation was carried out by using CGSim on the added heat preservation structures in the bottom edges and sidewalls of the hot zone and its effects on the temperature field, flow field and interface were analyzed. Simulation results show that, after the optimization of the hot zone, isotherms around the bottom edges and the sidewalls become flat and the flow of the molten silicon is better to remove the impurities. Therefore, the quality of the multi-crystalline silicon by directional solidification is improved.
出处 《材料科学》 2014年第5期159-167,共9页 Material Sciences
基金 江苏检验检疫局科技计划项目:晶体硅光伏组件电致发光(EL)评价方法研究及基于机器视觉自动识别分析的电致发光(EL)测试系统的研制(2013KJ19) 江苏大学第13批大学生科研立项(Y13A175)。
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  • 1DUAN Li,KANG Qi.Study on buoyancy convection phenomenon in the crystal growth process[J].Science China(Technological Sciences),2009,52(8):2367-2372. 被引量:3
  • 2宇慧平,隋允康,王敬,安国平.数值模拟自然对流对直拉单晶硅的影响(英文)[J].人工晶体学报,2006,35(4):696-701. 被引量:3
  • 3[7]Lu C.W.,Chen J.J.,and Hu L.J.,A numerical investigation of the thermal distribution effects in a heat-exchanger-method crystal growth system.Modelling Simul.Mater.Sci.Eng.,2002,10:147. 被引量:1
  • 4[8]Lu C.W.,and Chen J.J.,Influence of the crucible geometry on the shape of the melt-crystal interface during growth of sapphire crystal using a heat exchanger method.J.Crystal Growth,2004,266:239. 被引量:1
  • 5[9]Brandon S.,and Gazit S.,Interface shapes and thermal fields during the gradient solidification method growth of sapphire single crystals.Journal of Crystal Growth,1996,167:190. 被引量:1
  • 6[10]Floricica Barvinschi,Jean-Louis Santailler,Thierry Duffar,et al.,Modelling of Verneuil process for the sapphire crystal growth.Journal of Crystal Growth,1999,198/199:239. 被引量:1
  • 7[11]Borodin A.V.,Borodin V.A.,and Zhdanov A.V.,Simulation of the pressure distribution in the melt for sapphire ribbon growth by the Stepanov (EFG) technique.Journal of Crystal Growth,1999,198:220. 被引量:1
  • 8[12]Kurz M.,Pusztai A.,and Muller G.,Development of a new powerful computer code CrysVUN++ especially designed for fast simulation of bulk crystal growth processes.Proceedings of SPIE,2003,5078. 被引量:1
  • 9[13]Kurz M.,and MuK ller G.,Control of thermal conditions during crystal growth by inverse modeling.Journal of Crystal Growth,2000,208:341. 被引量:1
  • 10[14]Muller G.,and Birkmann B.,Optimization of VGF-growth of GaAs crystals by the aid of numerical modelling.Journal of Crystal Growth,2002,237-239:1745. 被引量:1

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