摘要
用射频磁控溅射法 ,在硅衬底上制备出具有良好的 (0 0 2 )择优取向的多晶ZnO薄膜。研究了室温下薄膜的光致发光特性 ,观察到显著的单绿光发射 (波长为 5 1 4nm)峰。在氧气中 830℃高温退火后 ,薄膜结晶质量明显提高 ,绿光发射峰强度变弱 ;在真空中 830℃高温退火后 ,绿光发射峰强度增加。
Highly orientated(002) polycrystalline ZnO films with hexagonal structure have been deposited by using r. f. magnetron sputtering. Strong monochromatic green photoluminescence (located at 514 nm) has been observed in these non intensively doped ZnO films when exited with 320 nm light.For the vacuum annealed samples at 830 ℃, the intensity of the green PL increases markedly. On the contrary, for the samples annealed in oxygen, the intensity of the green PL decreases rapidly. The green emission may correspond to the electron transition from deep oxygen vacancy level to the valance band.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2004年第3期291-294,共4页
Chinese Journal of Luminescence
基金
国家自然科学基金 ( 60 0 760 0 6)
教育部博士项目基金 ( 2 0 0 0 0 42 2 0 4)资助项目
