摘要
基于对半导体表面产生区宽度特点的分析,提出了与表面空间电荷区宽度呈线性关系的产生区宽度新模型。该模型形式简单,精度较高。数理统计分析结果表明,该线性模型是合理的。
Based on the analysis of the model of generation width in semiconductor surface, a new model of generation width is presented, which is a linear function of the equilibrium surface space charge region width. This model is highly accurate, although it is simple in form. The results obtained by mathematical statistics show that the linear model is reasonable.
出处
《微电子学》
CAS
CSCD
北大核心
2004年第3期289-290,共2页
Microelectronics
关键词
半导体
少数载流子
产生区宽度
线性模型
Semiconductor
Minority carrier
Generation width
Linear model
