摘要
研究石榴石磁泡膜中硬磁畴畴壁中垂直布洛赫线的稳定性可为研制布洛赫线存储器提供有益的帮助 .3类硬磁畴的形成是研究硬磁畴稳定性的前提 .本文综述了在石榴石磁泡膜上形成硬磁畴的 2类方法———“脉冲偏场法”和“低直流偏场法” .结合文献中的典型样品 ,对用“脉冲偏场法”和“低直流偏场法”形成 3类硬磁畴的过程进行了简单介绍 .
To research the stability of the vertical Bloch lines (VBL) which in the hard magnetic domains (HD) of garnet magnetic bubble film are able to provide the useful help for research and manufacture the Bloch lines storage (BLM). The formation of three kinds of HDs is the premise for the study of the stability of HDs. In this article, the two sorts of ways to form HDs at present, i. e. pulse bias field and low bias field, are summarized. The processes of formation of HDs using pulse bias field and low bias field are simply described for the typical sample of the reference.
出处
《物理实验》
北大核心
2004年第5期13-16,共4页
Physics Experimentation
基金
河北省自然基金项目 (No :1 0 0 1 4 7)
