摘要
文章回顾了a -Si∶H薄膜的发展历程 ,并介绍了其近 10年的研究状况 .为提高a -Si∶H薄膜的沉积速度 ,还重点介绍了一种新的微波电子回旋共振等离子体CVD(MWECR -CVD)技术 .该技术的特点是 :不含电极 ,可避免电极溅射造成的污染 ;等离子区离子密度高 ,对硅烷能高度分解 ,从而可显著提高薄膜生长速率 ;改变磁场位形和结构 ,可改变等离子体分布及轰击基片离子的能量 .文章还分析了其制备a -Si∶H薄膜存在的问题 ,提出了今后的研究方向 .
Recent developments over the past decade in the preparation of a-Si∶H films are reviewed, with emphasis on a new means to increase the deposition rate by microwave electron cyclotron resonance-chemical vapor deposition (MWECR-CVD). This method does not involve electrodes so that contamination due to sputtering of the electrodes is negligible, the high plasma density can decompose silane effectively so a higher deposition rate can be obtained, and by changing the magnetic field configuration the plasma distribution and energy of the ions bombarding the substrates can be easily changed. Current problems and future research directions are discussed.
出处
《物理》
CAS
北大核心
2004年第4期272-277,共6页
Physics
基金
国家重点基础研究发展规划 (批准号 :G0 0 0 0 2 82 0 1)资助项目
