摘要
通过分析等离子体增强化学气相沉积(PECVD)的特点,对残余氯的存在机制、等离子体场中离子轰击对氯在TiN膜内分布的影响作了进一步的讨论。运用经典偏聚理论,根据空位、位错特点,建立了PECVD过程中离子轰击促进氯向晶界、微孔表面等界面处偏聚的模型,从而充满地解释了文献中的有关实验现象。
The auther has further analyzed the residual chlorine involved in the plasma-enhanced chemi-
cal vapor deposited (PECVD) TiN film and the effect of ion bombardment in the plasma field on the chlo-
rine distribution according to PECVD TiN processing characteristics. A model is given of the enhancing
effect on the segregation of chlorine to grain boundaries and internal surface of voids by the ion bombard-
ment, which is based on the classical segregation theory and the characteristics of vacancy and dislocation.
The experiment results in the literature have thus been explained satisfactorily with the model.
出处
《江苏工业学院学报》
2004年第1期1-4,共4页
Journal of Jiangsu Polytechnic University
基金
国家自然科学基金(19392300-5)
