2Ruud W. M. Hoogeveen, Ronald J.van der A, Albert P. H. Goede. Extended wavelength InGaAs infrared (1.0μm ～ 2.4μm) detector arrays on SCIAMACHY for space-based spectrometry of the Earth atmosphere, Infrared Physics & Technology V42, 2001,1-16. 被引量：1
3P. Bhattacharya. Properties of Lattice-matched and Strained Indium Gallium Aresenide, INSPEC, London, 1993. 被引量：1
4J. D. Vincent. Fundamentals of Infrared Detector Operation and Testing, Wiley-Interscience, 1989. 被引量：1
5J. P. Moy, J. J. Chabbal, S. Chaussat, et al. Buttable arrays of 300 multiplexed InGaAs photodiodes for SWIR imaging, SPIE, V686, 1986, 93-95. 被引量：1
6L. J. Kozlowski, W. E. Tennant, M. Zandian et al.SWIR Staring FPA performent at room temperature, SPIE, V2746, 1996, 93-100. 被引量：1
7J. P. Moy, X. Hugon, J. Chabbal, et al. 3000InGaAs photodiode multiplexed linear array for SPOT4 SWIR channel, SPIE, V1107, 1989, 137-151. 被引量：1
8T. N. Krabach, C. Staller, S. Dejewskj, et al. InGaAs detector for miniature infrared instruments,SPIE, V1874, 1993, 214-223. 被引量：1
9S. Paul, J. B. Roy, P. K. Basu. Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1-xAs, J. Appl. Phys, V69(2), 1991,827-829. 被引量：1
10G. H. Olsen, A. M. Joshi, V. S. Ban et al. Multiplexed 256 element InGaAs detector array for 0.8μm - 1.7μm room temperature operation, SPIE, V972,1988, 279-285. 被引量：1
5[1]Lindner A,Velling P,Prost W,et al.The role of hydrogen in low-temperature MOVPE growth and carbon doping of In0.53Ga0.47As for InP-based HBT[J]. J. Cryst.Growth,1997,170:287-291. 被引量：1
7[3]Ducmka D C,Cueva G,Hier H,et al.DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/ In0.53Ga0.47As field effect transistors with variable gate-lengths[J]. IEEE Electron Device Letters, 2001,22(1):5-7. 被引量：1
8[5]Oliver J D,Eastman L F.Liquid phase epitaxial growth and characterization of high purity lattice matched InxGa1-xAs on 〈111〉B InP[J]. J. Electron. Mater.,1980,9(4):693-712. 被引量：1
9[6]Jolly S T,Narayan S Y,Packowski J P,et al.Growth and characterization of GaAs,GaInAs and GaInAsP for microwave applications[J]. Pro.SPIE,1982, 323: 74-80. 被引量：1
10[7]Kuo C P,Cohen R M,Stringfellow G B.MOVPE growth of InGaAs[J].J.Crystal Growth,1983,64: 461-470. 被引量：1
