摘要
为使半导体产品达到所要求的光学、电子和机械性能,必须实时地在沉积过程中直接测量薄膜应力。介绍了一种简便的薄膜应力测量装置方案,它可进行各种单晶、多晶和非晶结构材料沉积过程的现场应力测量,灵敏度优于2.5×106Pa,精度优于5%。该方案具有结构简单、测量速度快、适应性强等特点,可以应用于半导体集成电路生产线的薄膜生长过程控制检测。
In order to meet the requirements of optical, electronic and mechanical performance of semiconductor products, it is necessary to measure thin film stress during the deposition. A simple and convenient scheme is introduced in this paper, which can be used for the stress measurement of the deposition for such materials as single-crystal, multi-crystal or non-crystal. With the sensitivity of more than 5×10^(6) Pa and precision of more than 5%, the scheme has the advantage of simple structure, high processing and powerful adaptability. It is proposed that the device can be used in the process control measurement of thin film growth in the production line of semiconductor integrate circuits.
出处
《半导体光电》
CAS
CSCD
北大核心
2004年第1期79-82,共4页
Semiconductor Optoelectronics
基金
陕西省自然科学基金资助项目(2002F13)
关键词
薄膜应力
全闭环控制
集成二元光栅
测量灵敏度
测量误差
thin film stress
full closed loop control
integrated two-element
measurement sensitivity
measurement error
