摘要
传统的结深测试方法有:汞探针电容法、扩展电阻法、染色SEM法等,上述方法都具有相应的优点和局限性,本文介绍另外一种通过侧面结电容测试结深的方法,它可以嵌入电路中进行对任何一步工序后的结深监控,也可以在流片完成后对最终的结深进行监控,相比传统测试方法,它的突出优点是不具有破坏性,并且可以设计成一种PCM测试结构进行监控。
Conventional junction depth test methods include mercury probe capacitance method, SRP method and SEM test method/These methods have their advantage and shortage.This paper introduce another test method, it can monitor the junction depth after any process step.Compared with conventional test method, this method has no damage and can be designed as a PCM test structure for junction depth.
出处
《电子与封装》
2004年第1期59-60,共2页
Electronics & Packaging
