摘要
基于纯N2 离解产生活性氮原子能量条件的基本理论和纯氮离子渗氮模型 ,研究了间歇供N2 闭炉纯氮离子渗氮新工艺以实现纯氮代替氨或氮 氢的离子渗氮。通过对渗氮层显微组织、相组成和硬度梯度的测定与分析 ,对纯氮离子渗氮工艺中N2 分子临界离解能进行了理论计算和试验验证。结果表明 ,纯氮离子渗氮存在电压门槛值 ,只有在 70 0V左右的高电压下 ,并且采用间歇供N2 闭炉方式进行离子渗氮 ,才能产生明显的渗氮效果。在相同的渗氮时间里 ,间歇供N2 闭炉的纯氮离子渗氮可获得比常规纯氨离子渗氮更好的渗氮效果.
According to basic theories of energy condition for pure N_2 molecule being disassemble active nitrogen atoms and the ion nitriding model with pure nitrogen, the new technique of ion nitriding with pure nitrogen under furnace shut and N_2 provided intermittently was studied, and the critical disassemble energy of N_2 molecule for ion nitriding with pure nitrogen was calculated and validated experimentally through measuring and analyzing the microstructure, component phase and hardness gradient of nitrided layers. Experimental results show that there exists a voltage threshold in the ion nitriding with pure nitrogen. Only when the voltage is high as 700 V or so, the technique will produce obvious nitriding effect. In the same nitriding time, the nitriding effect by the technique is better than the conventional ammonia ion nitriding.
出处
《材料保护》
CAS
CSCD
北大核心
2004年第2期22-25,共4页
Materials Protection
基金
重庆市科委应用基础研究项目 ( 2 0 0 0 -60 82 )
关键词
纯氮离子渗氮工艺
间歇供氮
闭炉
活性氮原子
ion nitriding with pure nitrogen
N_2 provided intermittently
furnace shut
active nitrogen atom
