摘要
对丝网印刷PZT压电厚膜制备工艺浆料配置、印刷技术、退火条件、上下电极的选择及极化方法等进行了研究 ,并采用扫描电子显微镜 (SEM )及与之配套的能谱分析仪对制备的PZT样品的微观结构、成分进行了测试分析。结果表明 ,PZT压电厚膜的膜厚可达 10 0 μm ,印制图形分辨率在5 0 0 μm以上 ,在 80 0℃经 1h退火就可获得良好的微晶结构 。
PZT thick film on the silicon wafer was made using the screen printing technology, and the microstructure was also gotten by sintering. This technology is quite compatible with MEMS, as a promising method of the fabrication of MEMS piezoelectric micro actuators. In this paper, the PZT thick films process of screen printing is introduced. The process investigation includes material composition, screen printing, sinter condition, electrodes and polarization. The microstructures of PZT thick films were analyzed by scanning electron microscopy (SEM). The result shows that the film thickness can be more than 100 μm with the resolution for graphic printing 500μm, and the fine microcrystalline structure can be produced after 60 min sintering at 800 ℃.
出处
《微纳电子技术》
CAS
2003年第7期432-434,共3页
Micronanoelectronic Technology
基金
哈尔滨工业大学跨学科交叉性研究基金(HIT MD2 0 0 1 0 1)资助项目
