摘要
本文用俄歇电子能谱、X射线光电子能谱和紫外光电子能谱对用硫化铵溶液处理的InSb表面进行研究。结果表明,硫处理以后在样品表面生成。一层厚度约8A的硫化物钝化层,它对防止表面的氧化和碳沾污有明显的钝化作用。钝化层中,破原子既与锑原子成键,引起Sb3d芯能级发生1.9eV的化学位移;又与铟原子成键,引起In4d芯能级发生0.6—0.7eV的化学位移。350℃的真空退火使锑的硫化物发生分解。500℃退火没能使铟的硫化物完全分解,仍有一部分硫原子以铟的硫化物形式留在样品表面。
Auger electron spectroscopy (AES), X-ray photoelectron spectroscop (XPS) and ultraviolet photoelectron spectroscopy (UPS) have been used to study the InSb(lll) surfaces treated with (NH4)O2Sx. It is found that after the sulfide treatment, the sample surfaces are covered by a thin overlayer of sulfide (8A), which prevents the sample surface from oxidization and carbon contamination in the air. XPS and UPS results show that S atoms bond to both Sb atoms and In atoms on the sample surfaces. Sb-S bonding peaks in the Sb3d spectra exhibit a core level shift of 1.9eV, the bonding of S to In atoms causes an In4d core level shift of 0.6-0.7eV. A thermal annealing at 350℃ gives rise to the decomposition of Sb-S bonding and the evaporation Sb atoms from the sample surfaces. In-S bonding can not be decomposed completely by annealing up to 500℃ and a small amount of S atoms remains on the sample surfaces in the form of indium sulfide.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第6期1036-1043,共8页
Acta Physica Sinica
基金
国家自然科学基金
